Low Vt gate-first Al/TaN/[Ir3Si-HfSi 2-x]/HfLaON CMOS using simple laser annealing/reflection

C. C. Liao, Albert Chin, N. C. Su, M. F. Li, S. J. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

18 Scopus citations

Abstract

We report low Vt Al/TaN/[Ir3Si-HfSi 2-x]/HfLaON CMOS using simple laser annealing/reflection with self-aligned and gate-first process compatible with current VLSI. At 1.05 nm EOT, good θm-eff of 5.04 and 4.24 eV, low Vt of -0.16 and 0.13 V, high mobility of 85 and 209 cm2/Vs, and small 85°C BTI ≤40 mV (10 MV/cm, 1 hr) are measured for p- and n-MOS.

Original languageEnglish
Title of host publication2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT
Pages190-191
Number of pages2
DOIs
StatePublished - 23 Sep 2008
Event2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT - Honolulu, HI, United States
Duration: 17 Jun 200819 Jun 2008

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Conference

Conference2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT
CountryUnited States
CityHonolulu, HI
Period17/06/0819/06/08

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