Low-voltage steep turn-on pMOSFET using ferroelectric high-κ gate dielectric

Chun Hu Cheng, Albert Chin

Research output: Contribution to journalArticlepeer-review

92 Scopus citations


Power consumption is the most difficult challenge for CMOS integrated circuits. Here, we demonstrate experimentally a novel steep turn-on pMOSFET for low-voltage operation for the first time, which exhibits 5-60 mV/decade SS, wide voltage range for SS <60~ mV decade sturdy < 60~ mV decade SS at 85̂ C, faster transistor turn-on at above threshold voltage, and lower off-state leakage by greater than three orders of magnitude. Such improved leakage current is crucial to decrease the off-state leakage current in sub-1X nm CMOS. This was achieved using ferroelectric high-κ ZrHfO gate dielectric pMOSFET.

Original languageEnglish
Article number6693802
Pages (from-to)274-276
Number of pages3
JournalIEEE Electron Device Letters
Issue number2
StatePublished - 1 Feb 2014


  • Ferroelectric
  • ZrHfO
  • sub-threshold swing
  • transistor

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