Low-voltage organic thin film transistors with hydrophobic aluminum nitride film as gate insulator

Hsiao-Wen Zan*, Kuo Hsi Yen, Pu Kuan Liu, Kuo Hsin Ku, Chien Hsun Chen, Jennchang Hwang

*Corresponding author for this work

Research output: Contribution to journalArticle

40 Scopus citations

Abstract

This paper reports on the low-voltage (<5 V) pentacene-based organic thin film transistors (OTFTs) with a hydrophobic aluminum nitride (AlN) gate-dielectric. In this work, a thin (about 50 nm), smooth (roughness about 0.18 nm) and low-leakage AlN gate dielectric is obtained and characterized. The AlN film is hydrophobic and the surface free energy is similar to the organic or the polymer films. The demonstrated AlN-OTFTs were operated at a low-voltage (3-5 V). A low-threshold voltage (-2 V) and an extremely low-subthreshold swing (∼170 mV/dec) were also obtained. Under low-voltage operating conditions, the on/off current ratio exceeded 106, and the field effect mobility was mobility was 1.67 cm2/V s.

Original languageEnglish
Pages (from-to)450-454
Number of pages5
JournalOrganic Electronics
Volume8
Issue number4
DOIs
StatePublished - 1 Jan 2007

Keywords

  • AlN
  • Contact angle
  • High-k
  • OTFTs
  • Pentacene
  • Sputtering
  • Surface energy

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