Low-voltage operation GaAs spike-gate power FET with high power-added efficiency

Tsuyoshi Tanaka; Hidetoshi Furukawa; Hiroshi Takenaka; Tetsuzo Ueda; Takeshi Fukui; Daisuke Ueda

doi:10.1109/16.556143

Low-voltage operation GaAs spike-gate power FET with high power-added efficiency

Tsuyoshi Tanaka^*, Hidetoshi Furukawa, Hiroshi Takenaka, Tetsuzo Ueda, Takeshi Fukui, Daisuke Ueda

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

A GaAs power FET with a spike-gate has been developed for the high-efficiency operation under the extremely low supply voltage less than 1.5 V. The spike-gate provides both the low on-resistance of 2.2 ω7/mm and the high transconductance of 180 niS/nim without reducing the output impedance nor increasing the gate resistance. The implemented device achieved the output power of 31.5 dBm with 70% power-added efficiency at the frequency of 900 MHz. It should be noted that the present device kept PAE of 60% even at the bias of 0.5 V, which is the lowest voltage ever attained.

Original language	English
Pages (from-to)	354-359
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	44
Issue number	3
DOIs	https://doi.org/10.1109/16.556143
State	Published - 1 Dec 1997

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AU - Fukui, Takeshi

AU - Ueda, Daisuke

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AB - A GaAs power FET with a spike-gate has been developed for the high-efficiency operation under the extremely low supply voltage less than 1.5 V. The spike-gate provides both the low on-resistance of 2.2 ω7/mm and the high transconductance of 180 niS/nim without reducing the output impedance nor increasing the gate resistance. The implemented device achieved the output power of 31.5 dBm with 70% power-added efficiency at the frequency of 900 MHz. It should be noted that the present device kept PAE of 60% even at the bias of 0.5 V, which is the lowest voltage ever attained.

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Low-voltage operation GaAs spike-gate power FET with high power-added efficiency

Abstract

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