We have developed one-transistor ferroelectric memory using lead titanate (PTO) as a gate dielectric directly formed on Si without any buffer layer. The PTO/Si metal-oxide-semiconductor field-effect transistor memory has shown a large threshold voltage shift of 1.6 V at only ±4 V program/erase voltages. The corresponding good interface was achieved by lowering the anneal temperature to 450°C. Besides the sharp capacitance change of 0.17 μF/V cm2, it was also evidenced by the high mobility of 169 cm 2/V s close to high-κ HfO2. In addition, long retention > 1000 s and endurance >1011 stress cycles in the device suggested good memory characteristics.