Low voltage lead titanate/Si one-transistor ferroelectric memory with good device characteristics

C. L. Sun*, San-Yuan Chen, C. C. Liao, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

We have developed one-transistor ferroelectric memory using lead titanate (PTO) as a gate dielectric directly formed on Si without any buffer layer. The PTO/Si metal-oxide-semiconductor field-effect transistor memory has shown a large threshold voltage shift of 1.6 V at only ±4 V program/erase voltages. The corresponding good interface was achieved by lowering the anneal temperature to 450°C. Besides the sharp capacitance change of 0.17 μF/V cm2, it was also evidenced by the high mobility of 169 cm 2/V s close to high-κ HfO2. In addition, long retention > 1000 s and endurance >1011 stress cycles in the device suggested good memory characteristics.

Original languageEnglish
Pages (from-to)4726-4728
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number20
DOIs
StatePublished - 15 Nov 2004

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