Low-voltage GaInP/GaAs HBT wideband gilbert downconverter using transformer RF balun

Sheng Che Tseng*, Chin-Chun Meng, Chih Kai Wu, Guo Wei Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

This paper demonstrates a low-voltage wideband downconverter along with an integrated transformer RF balun using the 2-μm GaInP/GaAs HBT technology. This transformer is a symmetric type and plays a role as a single-to- differential balun. Without the parasitics between the transformer and the substrate, the transformer can work at higher frequencies. This transformer downconverter operates from 1.5 GHz to 14 GHz with around 20-dB conversion gain and 1.8-GHz IF 3-dB bandwidth. The frequency range of the mixing operation is wide and covers the digital video broadcasting via satellite (DVB-S) bands. This mixer hence is useful for DVB-S applications. Since there is no dc voltage drop on the transformer, the voltage supply of the mixer core is only 2.4 V and the current consumption is approximately 8.6 mA. The chip size of the entire mixer is 1 mm × 1 mm while the transformer occupies the estate of 150 μm × 150 μm.

Original languageEnglish
Title of host publication2007 IEEE MTT-S International Microwave Symposium Digest
Pages2149-2152
Number of pages4
DOIs
StatePublished - 2 Oct 2007
Event2007 IEEE MTT-S International Microwave Symposium, IMS 2007 - Honolulu, HI, United States
Duration: 3 Jun 20078 Jun 2007

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2007 IEEE MTT-S International Microwave Symposium, IMS 2007
CountryUnited States
CityHonolulu, HI
Period3/06/078/06/07

Keywords

  • Downconverter
  • GaInP/GaAs heterojunction bipolar transistor (HBT)
  • Transformer
  • Transimpedance amplifier

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