Low-voltage-driven flexible InGaZnO thin-film transistor with small subthreshold swing

Nai Chao Su*, Shui Jinn Wang, Chin Chuan Huang, Yu Han Chen, Hao Yuan Huang, Chen Kuo Chiang, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticle

49 Scopus citations

Abstract

A flexible thin-film transistor (TFT) was made by integrating a high-κ HfLaO gate dielectric and an amorphous-InGaZnO (a-IGZO) active layer on a polyimide substrate. This flexible HfLaO/a-IGZO TFT exhibits a low threshold voltage of 0.1 V, a small subthreshold swing of 0.18 V/dec, a high maximum saturation mobility of 22.1 cm2V • s, and an acceptable on/off current ratio of 2×105. The low threshold voltage and small subthreshold swing allow the device to operate at 1.5 V for low-power applications, which should enable significant future progress in energy efficiency.

Original languageEnglish
Article number5460931
Pages (from-to)680-682
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number7
DOIs
StatePublished - 1 Jul 2010

Keywords

  • Flexible thin-film transistors (TFTs)
  • HfLaO
  • InGaZnO (IGZO)
  • high-κ

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    Su, N. C., Wang, S. J., Huang, C. C., Chen, Y. H., Huang, H. Y., Chiang, C. K., & Chin, A. (2010). Low-voltage-driven flexible InGaZnO thin-film transistor with small subthreshold swing. IEEE Electron Device Letters, 31(7), 680-682. [5460931]. https://doi.org/10.1109/LED.2010.2047232