Low-voltage CMOS device scaling

Chen-Ming Hu*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

31 Scopus citations

Abstract

Discussions of device scaling are often based on simplistic device models. Much more accurate models have become available recently but remain largely unknown to the circuit and design community. This paper highlights some of these models by projecting low-voltage CMOS device trends.

Original languageEnglish
Title of host publicationDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Editors Anon
PublisherPubl by IEEE
Pages86-87
Number of pages2
ISBN (Print)0780318455
DOIs
StatePublished - 1 Jan 1994
EventProceedings of the 1994 IEEE International Solid-State Circuits Conference - San Francisco, CA, USA
Duration: 16 Feb 199418 Feb 1994

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference

Conference

ConferenceProceedings of the 1994 IEEE International Solid-State Circuits Conference
CitySan Francisco, CA, USA
Period16/02/9418/02/94

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