Low voltage and low power UWB CMOS LNA using current-reused and forward body biasing techniques

Jyh-Chyurn Guo; Ching Shiang Lin; Yu Tang Liang

doi:10.1109/MWSYM.2017.8058688

Low voltage and low power UWB CMOS LNA using current-reused and forward body biasing techniques

Jyh-Chyurn Guo, Ching Shiang Lin, Yu Tang Liang

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

A ultra-wideband (UWB) low noise amplifier (LNA) was designed and fabricated in 0.18μm CMOS technology. The successful integration of current-reused and forward body biasing (FBB) techniques in a cascade amplifier can enable an aggressive scaling of the supply voltages, V_dd and Vg1 to 1.0V and 0.53V The low voltage feature from FBB leads to more than 50% saving of power dissipation to 5.2mW. The measured power gain (S21) can reach 10.55∼12.6dB and noise figure (NF50) is 3.2∼3.95 dB through the UWB (3∼10.5GHz). This UWB LNA with small chip area (0.69mm²) provides a solution of low voltages, low power, and low cost.

Original language	English
Title of host publication	2017 IEEE MTT-S International Microwave Symposium, IMS 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	764-767
Number of pages	4
ISBN (Electronic)	9781509063604
DOIs	https://doi.org/10.1109/MWSYM.2017.8058688
State	Published - 4 Oct 2017
Event	2017 IEEE MTT-S International Microwave Symposium, IMS 2017 - Honololu, United States Duration: 4 Jun 2017 → 9 Jun 2017

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
ISSN (Print)	0149-645X

Conference

Conference	2017 IEEE MTT-S International Microwave Symposium, IMS 2017
Country	United States
City	Honololu
Period	4/06/17 → 9/06/17

Keywords

Cascade amplifier
Current-reused
FBB
LNA
Low power
Low voltage
UWB

Access to Document

10.1109/MWSYM.2017.8058688

Link to publication in Scopus

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Guo, J-C., Lin, C. S., & Liang, Y. T. (2017). Low voltage and low power UWB CMOS LNA using current-reused and forward body biasing techniques. In 2017 IEEE MTT-S International Microwave Symposium, IMS 2017 (pp. 764-767). [8058688] (IEEE MTT-S International Microwave Symposium Digest). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MWSYM.2017.8058688

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title = "Low voltage and low power UWB CMOS LNA using current-reused and forward body biasing techniques",

abstract = "A ultra-wideband (UWB) low noise amplifier (LNA) was designed and fabricated in 0.18μm CMOS technology. The successful integration of current-reused and forward body biasing (FBB) techniques in a cascade amplifier can enable an aggressive scaling of the supply voltages, Vdd and Vg1 to 1.0V and 0.53V The low voltage feature from FBB leads to more than 50% saving of power dissipation to 5.2mW. The measured power gain (S21) can reach 10.55∼12.6dB and noise figure (NF50) is 3.2∼3.95 dB through the UWB (3∼10.5GHz). This UWB LNA with small chip area (0.69mm2) provides a solution of low voltages, low power, and low cost.",

keywords = "Cascade amplifier, Current-reused, FBB, LNA, Low power, Low voltage, UWB",

author = "Jyh-Chyurn Guo and Lin, {Ching Shiang} and Liang, {Yu Tang}",

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doi = "10.1109/MWSYM.2017.8058688",

language = "English",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Guo, J-C, Lin, CS & Liang, YT 2017, Low voltage and low power UWB CMOS LNA using current-reused and forward body biasing techniques. in 2017 IEEE MTT-S International Microwave Symposium, IMS 2017., 8058688, IEEE MTT-S International Microwave Symposium Digest, Institute of Electrical and Electronics Engineers Inc., pp. 764-767, 2017 IEEE MTT-S International Microwave Symposium, IMS 2017, Honololu, United States, 4/06/17. https://doi.org/10.1109/MWSYM.2017.8058688

Low voltage and low power UWB CMOS LNA using current-reused and forward body biasing techniques. / Guo, Jyh-Chyurn; Lin, Ching Shiang; Liang, Yu Tang.

2017 IEEE MTT-S International Microwave Symposium, IMS 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 764-767 8058688 (IEEE MTT-S International Microwave Symposium Digest).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - A ultra-wideband (UWB) low noise amplifier (LNA) was designed and fabricated in 0.18μm CMOS technology. The successful integration of current-reused and forward body biasing (FBB) techniques in a cascade amplifier can enable an aggressive scaling of the supply voltages, Vdd and Vg1 to 1.0V and 0.53V The low voltage feature from FBB leads to more than 50% saving of power dissipation to 5.2mW. The measured power gain (S21) can reach 10.55∼12.6dB and noise figure (NF50) is 3.2∼3.95 dB through the UWB (3∼10.5GHz). This UWB LNA with small chip area (0.69mm2) provides a solution of low voltages, low power, and low cost.

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