Low voltage and high speed SONOS flash memory technology: The strategies and the reliabilities

Steve S. Chung*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

The flash memory has been evolved from floating gate to the nitride-trapping storage type-SONOS, and even progresses toward the nano-crystal memory in the future. Among them, floating gate flash memory has been one of the most successful nonvolatile memories for the largest volume production, in the past two decades. In comparison, SONOS-type trapping storage has reliability issue and has yet not been fully approved for mass production. On the other hand, the floating gate flash memory requires high control gate voltage for programming which limits the device scaling and reliability, while the SONOS type flash needs to overcome the reliability issues, especially the tunnel oxide and data retention. In this paper, we address different strategies for designing SONOS-type flash memories with low voltage operation, for achieving good reliability while keeping high speed performance. Various schemes will be demonstrated to meet the low voltage and high speed requirements. Also, the strategies for achieving excellent data retention will be specifically presented.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2010, CSTIC 2010
Pages73-78
Number of pages6
Edition1
DOIs
StatePublished - 1 Dec 2010
EventChina Semiconductor Technology International Conference 2010, CSTIC 2010 - Shanghai, China
Duration: 18 Mar 201019 Mar 2010

Publication series

NameECS Transactions
Number1
Volume27
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceChina Semiconductor Technology International Conference 2010, CSTIC 2010
CountryChina
CityShanghai
Period18/03/1019/03/10

Fingerprint Dive into the research topics of 'Low voltage and high speed SONOS flash memory technology: The strategies and the reliabilities'. Together they form a unique fingerprint.

Cite this