Low transparency current density and low internal loss of 1060-nm InGaAs laser with GaAsP-GaAs superlattices as strain-compensated layer

C. T. Wan*, Y. K. Su, Hsin-Chieh Yu, C. Y. Huang, W. H. Lin, W. C. Chen, H. C. Tseng, J. B. Horng, C. Hu, Seth Tsau

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

In this letter, the strained In0.22Ga0.78As-GaAs single quantum-well lasers grown by metal-organic vapor phase epitaxy were studied. The lasing wavelength of the fabricated InGaAs laser was 1056 nm, whereas the internal loss (αi) and the transparency current density (Jtr) were 1.78 cm-1 and 40.2 A/cm2, respectively. By using the GaAsP-GaAs superlattices as strain-compensated layer, the lasing wavelength was 1052 nm, and the αi and Jtr could be reduced to 0.63 cm-1 and 39.1 A/cm2, respectively. To the best of our knowledge, the Jtr was the lowest among the reported InGaAs lasers around 1060 nm.

Original languageEnglish
Pages (from-to)1474-1476
Number of pages3
JournalIEEE Photonics Technology Letters
Volume21
Issue number19
DOIs
StatePublished - 7 Oct 2009

Keywords

  • InGaAs
  • Lasers
  • Metal-organic vapor phase epitaxy (MOVPE)

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