In this letter, the strained In0.22Ga0.78As-GaAs single quantum-well lasers grown by metal-organic vapor phase epitaxy were studied. The lasing wavelength of the fabricated InGaAs laser was 1056 nm, whereas the internal loss (αi) and the transparency current density (Jtr) were 1.78 cm-1 and 40.2 A/cm2, respectively. By using the GaAsP-GaAs superlattices as strain-compensated layer, the lasing wavelength was 1052 nm, and the αi and Jtr could be reduced to 0.63 cm-1 and 39.1 A/cm2, respectively. To the best of our knowledge, the Jtr was the lowest among the reported InGaAs lasers around 1060 nm.
- Metal-organic vapor phase epitaxy (MOVPE)