Low-threshold-voltage TaN/LaTiO n-MOSFETs with small EOT

S. H. Lin*, C. H. Cheng, W. Barn Chen, F. Syeh Yeh, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

In this letter, we report a low threshold voltage (Vt) of 0.12 V in self-aligned gate-first TaN/LaTiO n-MOSFETs, at an equivalent oxide thickness of only 0.63 nm. This was achieved by using Ni-induced solid-phase diffusion of SiO2-covered Ni/Sb that reduced the high-κ dielectric interfacial reactions.

Original languageEnglish
Pages (from-to)999-1001
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number9
DOIs
StatePublished - 21 Aug 2009

Keywords

  • LaTiO
  • Low V
  • Solid-phase diffusion (SPD)

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