Low-threshold-voltage MoN/HfAlO/SiON p-MOSFETs with 0.85-nm EOT

M. F. Chang*, Po-Tsung Lee, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticle

14 Scopus citations


By using HfAlO as a capping layer on SiON, MoN/HfAlO/SiON p-MOSFETs show an effective work function of 5.1 eV, a low threshold voltage of -0.1 V, and a peak hole mobility of 80 cm2/(V · s) at small equivalent oxide thickness of 0.85 nm. These self-aligned and gate-first p-MOSFETs processes, with standard ion implantation and 1000 °C rapid thermal annealing, are fully compatible with current very large scale integration fabrication lines.

Original languageEnglish
Pages (from-to)861-863
Number of pages3
JournalIEEE Electron Device Letters
Issue number8
StatePublished - 16 Jul 2009


  • Capping layer
  • HfAlO
  • MoN

Fingerprint Dive into the research topics of 'Low-threshold-voltage MoN/HfAlO/SiON p-MOSFETs with 0.85-nm EOT'. Together they form a unique fingerprint.

  • Cite this