Low threshold voltage and high drive current poly-silicon thin film transistors using ytterbium metal gate and LaALO3 dielectric

B. F. Hung, C. H. Wu, Albert Chin, S. J. Wang, J. W. Lin, I. J. Hsieh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have demonstrated high-performance metal-gate/high-κ Ytterbium/LaAlO3 low-temperature poly-Si (LTPS) thin film transistors (TFTs) that have both high drive current capability and high voltage operation. The high drive current is due to the combined effect of low work-function Ytterbium metal gate and high gate capacitance by high-κ LaAlO3 dielectric. The high breakdown voltage is also due to the high-κ LaAlO3 dielectric to give larger physical thickness at the same equivalent oxide thickness (EOT). The good reliability and full process compatibility are the other important merits for Ytterbium/LaAlO3 device.

Original languageEnglish
Title of host publicationAD'07 - Proceedings of Asia Display 2007
Pages1190-1193
Number of pages4
StatePublished - 1 Dec 2007
EventAsia Display 2007, AD'07 - Shanghai, China
Duration: 12 Mar 200716 Mar 2007

Publication series

NameAD'07 - Proceedings of Asia Display 2007
Volume2

Conference

ConferenceAsia Display 2007, AD'07
CountryChina
CityShanghai
Period12/03/0716/03/07

Keywords

  • EOT
  • LaAlO
  • LTPS
  • Threshold voltage
  • Ytterbium

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