Low-threshold short-wavelength infrared InGaAs/GaAsSb 'W'-Type QW laser on InP substrate

Chia Hao Chang; Zong Lin Li; Hong Ting Lu; Chien-Hung Pan; Chien-Ping Lee; Kuo-Jui Lin; Sheng-Di Lin

doi:10.1109/LPT.2014.2362151

Low-threshold short-wavelength infrared InGaAs/GaAsSb 'W'-Type QW laser on InP substrate

Chia Hao Chang, Zong Lin Li, Hong Ting Lu, Chien-Hung Pan, Chien-Ping Lee, Kuo-Jui Lin, Sheng-Di Lin

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The electrically driven short-wavelength infrared semiconductor laser using InP-based InGaAs/GaAsSb W-type quantum wells (QWs) is investigated. Using Sb-free separate confined layer and engineered QWs, the laser lasing at 2.35μ m exhibits a low-threshold current density at infinite cavity length of 83 A/cm² per QW under pulsed operation at room temperature. The internal loss α ⁱ and internal quantum efficiency η ⁱ of the laser are 17.5 cm^-1 and 15%, respectively.

Original language	English
Article number	6933874
Pages (from-to)	225-228
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	27
Issue number	3
DOIs	https://doi.org/10.1109/LPT.2014.2362151
State	Published - 1 Feb 2015

Keywords

'W'-type quantum wells
InAlGaAs separate confined layer
InP-based
short-wavelength infrared

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title = "Low-threshold short-wavelength infrared InGaAs/GaAsSb 'W'-Type QW laser on InP substrate",

abstract = "The electrically driven short-wavelength infrared semiconductor laser using InP-based InGaAs/GaAsSb W-type quantum wells (QWs) is investigated. Using Sb-free separate confined layer and engineered QWs, the laser lasing at 2.35μ m exhibits a low-threshold current density at infinite cavity length of 83 A/cm2 per QW under pulsed operation at room temperature. The internal loss α i and internal quantum efficiency η i of the laser are 17.5 cm-1 and 15%, respectively.",

keywords = "'W'-type quantum wells, InAlGaAs separate confined layer, InP-based, short-wavelength infrared",

author = "Chang, {Chia Hao} and Li, {Zong Lin} and Lu, {Hong Ting} and Chien-Hung Pan and Chien-Ping Lee and Kuo-Jui Lin and Sheng-Di Lin",

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T1 - Low-threshold short-wavelength infrared InGaAs/GaAsSb 'W'-Type QW laser on InP substrate

AU - Chang, Chia Hao

AU - Li, Zong Lin

AU - Lu, Hong Ting

AU - Pan, Chien-Hung

AU - Lee, Chien-Ping

AU - Lin, Kuo-Jui

AU - Lin, Sheng-Di

PY - 2015/2/1

Y1 - 2015/2/1

N2 - The electrically driven short-wavelength infrared semiconductor laser using InP-based InGaAs/GaAsSb W-type quantum wells (QWs) is investigated. Using Sb-free separate confined layer and engineered QWs, the laser lasing at 2.35μ m exhibits a low-threshold current density at infinite cavity length of 83 A/cm2 per QW under pulsed operation at room temperature. The internal loss α i and internal quantum efficiency η i of the laser are 17.5 cm-1 and 15%, respectively.

AB - The electrically driven short-wavelength infrared semiconductor laser using InP-based InGaAs/GaAsSb W-type quantum wells (QWs) is investigated. Using Sb-free separate confined layer and engineered QWs, the laser lasing at 2.35μ m exhibits a low-threshold current density at infinite cavity length of 83 A/cm2 per QW under pulsed operation at room temperature. The internal loss α i and internal quantum efficiency η i of the laser are 17.5 cm-1 and 15%, respectively.

KW - 'W'-type quantum wells

KW - InAlGaAs separate confined layer

KW - InP-based

KW - short-wavelength infrared

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DO - 10.1109/LPT.2014.2362151

M3 - Article

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

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M1 - 6933874

ER -

Low-threshold short-wavelength infrared InGaAs/GaAsSb 'W'-Type QW laser on InP substrate

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