Low-threshold short-wavelength infrared InGaAs/GaAsSb 'W'-Type QW laser on InP substrate

Chia Hao Chang; Zong Lin Li; Hong Ting Lu; Chien Hung Pan; Chien-Ping Lee; Kuo-Jui Lin; Sheng-Di Lin

doi:10.1109/LPT.2014.2362151

Low-threshold short-wavelength infrared InGaAs/GaAsSb 'W'-Type QW laser on InP substrate

Chia Hao Chang, Zong Lin Li, Hong Ting Lu, Chien Hung Pan, Chien-Ping Lee, Kuo-Jui Lin, Sheng-Di Lin

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The electrically driven short-wavelength infrared semiconductor laser using InP-based InGaAs/GaAsSb W-type quantum wells (QWs) is investigated. Using Sb-free separate confined layer and engineered QWs, the laser lasing at 2.35μ m exhibits a low-threshold current density at infinite cavity length of 83 A/cm² per QW under pulsed operation at room temperature. The internal loss α ⁱ and internal quantum efficiency η ⁱ of the laser are 17.5 cm^-1 and 15%, respectively.

Original language	English
Article number	6933874
Pages (from-to)	225-228
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	27
Issue number	3
DOIs	https://doi.org/10.1109/LPT.2014.2362151
State	Published - 1 Feb 2015

Keywords

'W'-type quantum wells
InAlGaAs separate confined layer
InP-based
short-wavelength infrared

Access to Document

10.1109/LPT.2014.2362151

Link to publication in Scopus

Fingerprint Dive into the research topics of 'Low-threshold short-wavelength infrared InGaAs/GaAsSb 'W'-Type QW laser on InP substrate'. Together they form a unique fingerprint.

Cite this

@article{62d04266a6254fa79ad34eb04c4bc6b9,

title = "Low-threshold short-wavelength infrared InGaAs/GaAsSb 'W'-Type QW laser on InP substrate",

abstract = "The electrically driven short-wavelength infrared semiconductor laser using InP-based InGaAs/GaAsSb W-type quantum wells (QWs) is investigated. Using Sb-free separate confined layer and engineered QWs, the laser lasing at 2.35μ m exhibits a low-threshold current density at infinite cavity length of 83 A/cm2 per QW under pulsed operation at room temperature. The internal loss α i and internal quantum efficiency η i of the laser are 17.5 cm-1 and 15%, respectively.",

keywords = "'W'-type quantum wells, InAlGaAs separate confined layer, InP-based, short-wavelength infrared",

author = "Chang, {Chia Hao} and Li, {Zong Lin} and Lu, {Hong Ting} and Pan, {Chien Hung} and Chien-Ping Lee and Kuo-Jui Lin and Sheng-Di Lin",

year = "2015",

month = feb,

day = "1",

doi = "10.1109/LPT.2014.2362151",

language = "English",

volume = "27",

pages = "225--228",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Low-threshold short-wavelength infrared InGaAs/GaAsSb 'W'-Type QW laser on InP substrate

AU - Chang, Chia Hao

AU - Li, Zong Lin

AU - Lu, Hong Ting

AU - Pan, Chien Hung

AU - Lee, Chien-Ping

AU - Lin, Kuo-Jui

AU - Lin, Sheng-Di

PY - 2015/2/1

Y1 - 2015/2/1

N2 - The electrically driven short-wavelength infrared semiconductor laser using InP-based InGaAs/GaAsSb W-type quantum wells (QWs) is investigated. Using Sb-free separate confined layer and engineered QWs, the laser lasing at 2.35μ m exhibits a low-threshold current density at infinite cavity length of 83 A/cm2 per QW under pulsed operation at room temperature. The internal loss α i and internal quantum efficiency η i of the laser are 17.5 cm-1 and 15%, respectively.

AB - The electrically driven short-wavelength infrared semiconductor laser using InP-based InGaAs/GaAsSb W-type quantum wells (QWs) is investigated. Using Sb-free separate confined layer and engineered QWs, the laser lasing at 2.35μ m exhibits a low-threshold current density at infinite cavity length of 83 A/cm2 per QW under pulsed operation at room temperature. The internal loss α i and internal quantum efficiency η i of the laser are 17.5 cm-1 and 15%, respectively.

KW - 'W'-type quantum wells

KW - InAlGaAs separate confined layer

KW - InP-based

KW - short-wavelength infrared

UR - http://www.scopus.com/inward/record.url?scp=84921362536&partnerID=8YFLogxK

U2 - 10.1109/LPT.2014.2362151

DO - 10.1109/LPT.2014.2362151

M3 - Article

AN - SCOPUS:84921362536

VL - 27

SP - 225

EP - 228

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 3

M1 - 6933874

ER -