Abstract
The electrically driven short-wavelength infrared semiconductor laser using InP-based InGaAs/GaAsSb W-type quantum wells (QWs) is investigated. Using Sb-free separate confined layer and engineered QWs, the laser lasing at 2.35μ m exhibits a low-threshold current density at infinite cavity length of 83 A/cm2 per QW under pulsed operation at room temperature. The internal loss α i and internal quantum efficiency η i of the laser are 17.5 cm-1 and 15%, respectively.
Original language | English |
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Article number | 6933874 |
Pages (from-to) | 225-228 |
Number of pages | 4 |
Journal | IEEE Photonics Technology Letters |
Volume | 27 |
Issue number | 3 |
DOIs | |
State | Published - 1 Feb 2015 |
Keywords
- 'W'-type quantum wells
- InAlGaAs separate confined layer
- InP-based
- short-wavelength infrared