Low-threshold short-wavelength infrared InGaAs/GaAsSb 'W'-Type QW laser on InP substrate

Chia Hao Chang, Zong Lin Li, Hong Ting Lu, Chien-Hung Pan, Chien-Ping Lee, Kuo-Jui Lin, Sheng-Di Lin

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

The electrically driven short-wavelength infrared semiconductor laser using InP-based InGaAs/GaAsSb W-type quantum wells (QWs) is investigated. Using Sb-free separate confined layer and engineered QWs, the laser lasing at 2.35μ m exhibits a low-threshold current density at infinite cavity length of 83 A/cm2 per QW under pulsed operation at room temperature. The internal loss α i and internal quantum efficiency η i of the laser are 17.5 cm-1 and 15%, respectively.

Original languageEnglish
Article number6933874
Pages (from-to)225-228
Number of pages4
JournalIEEE Photonics Technology Letters
Volume27
Issue number3
DOIs
StatePublished - 1 Feb 2015

Keywords

  • 'W'-type quantum wells
  • InAlGaAs separate confined layer
  • InP-based
  • short-wavelength infrared

Fingerprint Dive into the research topics of 'Low-threshold short-wavelength infrared InGaAs/GaAsSb 'W'-Type QW laser on InP substrate'. Together they form a unique fingerprint.

Cite this