Low-Threshold Plasmonic Lasers on a Single-Crystalline Epitaxial Silver Platform at Telecom Wavelength

Chien Ju Lee, Han Yeh, Fei Cheng, Ping Hsiang Su, Tsing Hua Her, Yen Chun Chen, Chun Yuan Wang, Shangir Gwo, Seth R. Bank, Chih Kang Shih*, Wen-Hao Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations


We report on the first demonstration of metal-insulator-semiconductor-type plasmonic lasers at the telecom wavelength (∼1.3 μm) using top-down fabricated semiconductor waveguides on single-crystalline metallic platforms formed using epitaxially grown Ag films. The critical role of the Ag film thickness in sustaining plasmonic lasing at the telecom wavelength is investigated systematically. Low-threshold (0.2 MW/cm2) and continuous-wave operation of plasmonic lasing at cryogenic temperatures can be achieved on a 150 nm Ag platform with minimum radiation leakage into the substrate. Plasmonic lasing occurs preferentially through higher-order surface-plasmon-polariton modes, which exhibit a higher mode confinement factor, lower propagation loss, and better field-gain coupling. We observed plasmonic lasing up to ∼200 K under pulsed excitations. The plasmonic lasers on large-area epitaxial Ag films open up a scalable platform for on-chip integrations of plasmonics and optoelectronics at the telecom wavelength.

Original languageEnglish
Pages (from-to)1431-1439
Number of pages9
JournalACS Photonics
Issue number6
StatePublished - 21 Jun 2017


  • epitaxial silver film
  • low threshold
  • plasmonic nanolaser
  • semiconductor nanolaser
  • surface plasmon polariton
  • telecom wavelength

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