Low-threshold InGaAs/GaAsSb 'W'-type quantum well laser on InP substrate

Chia Hao Chang, Zong Lin Li, Hong Ting Lu, Chien Ping Lee, Sheng-Di Lin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The mid-infrared electrically-driven laser using InGaAs/GaAsSb 'W'-type QWs is demonstrated at room temperature. The InP-based laser lasing at 2.35 Μm with the lowest threshold current density of 1.42 kA/cm2 is presented.

Original languageEnglish
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2014
PublisherOptical Society of American (OSA)
ISBN (Print)9781557529992
DOIs
StatePublished - 8 Jun 2014
EventCLEO: Science and Innovations, CLEO_SI 2014 - San Jose, CA, United States
Duration: 8 Jun 2014 → 13 Jun 2014

Publication series

NameOptics InfoBase Conference Papers
ISSN (Print)2160-8989
ISSN (Electronic)2162-2701

Conference

ConferenceCLEO: Science and Innovations, CLEO_SI 2014
CountryUnited States
CitySan Jose, CA
Period8/06/14 → 13/06/14

Access to Document

Fingerprint Dive into the research topics of 'Low-threshold InGaAs/GaAsSb 'W'-type quantum well laser on InP substrate'. Together they form a unique fingerprint.

Cite this