Low-threshold InGaAs/GaAsSb 'W'-type quantum well laser on InP substrate

Chia Hao Chang; Zong Lin Li; Hong Ting Lu; Chien Ping Lee; Sheng-Di Lin

doi:10.1364/CLEO_SI.2014.STh3G.1

Low-threshold InGaAs/GaAsSb 'W'-type quantum well laser on InP substrate

Chia Hao Chang, Zong Lin Li, Hong Ting Lu, Chien Ping Lee, Sheng-Di Lin

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The mid-infrared electrically-driven laser using InGaAs/GaAsSb 'W'-type QWs is demonstrated at room temperature. The InP-based laser lasing at 2.35 Μm with the lowest threshold current density of 1.42 kA/cm2 is presented.

Original language	English
Title of host publication	CLEO
Subtitle of host publication	Science and Innovations, CLEO_SI 2014
Publisher	Optical Society of American (OSA)
ISBN (Print)	9781557529992
DOIs	https://doi.org/10.1364/CLEO_SI.2014.STh3G.1
State	Published - 8 Jun 2014
Event	CLEO: Science and Innovations, CLEO_SI 2014 - San Jose, CA, United States Duration: 8 Jun 2014 → 13 Jun 2014

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Print)	2160-8989
ISSN (Electronic)	2162-2701

Conference

Conference	CLEO: Science and Innovations, CLEO_SI 2014
Country	United States
City	San Jose, CA
Period	8/06/14 → 13/06/14

Access to Document

10.1364/CLEO_SI.2014.STh3G.1

Link to publication in Scopus

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Cite this

Chang, C. H., Li, Z. L., Lu, H. T., Lee, C. P., & Lin, S-D. (2014). Low-threshold InGaAs/GaAsSb 'W'-type quantum well laser on InP substrate. In CLEO: Science and Innovations, CLEO_SI 2014 (Optics InfoBase Conference Papers). Optical Society of American (OSA). https://doi.org/10.1364/CLEO_SI.2014.STh3G.1

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title = "Low-threshold InGaAs/GaAsSb 'W'-type quantum well laser on InP substrate",

abstract = "The mid-infrared electrically-driven laser using InGaAs/GaAsSb 'W'-type QWs is demonstrated at room temperature. The InP-based laser lasing at 2.35 Μm with the lowest threshold current density of 1.42 kA/cm2 is presented.",

author = "Chang, {Chia Hao} and Li, {Zong Lin} and Lu, {Hong Ting} and Lee, {Chien Ping} and Sheng-Di Lin",

year = "2014",

month = jun,

day = "8",

doi = "10.1364/CLEO_SI.2014.STh3G.1",

language = "English",

isbn = "9781557529992",

series = "Optics InfoBase Conference Papers",

publisher = "Optical Society of American (OSA)",

booktitle = "CLEO",

note = "null ; Conference date: 08-06-2014 Through 13-06-2014",

}

Chang, CH, Li, ZL, Lu, HT, Lee, CP & Lin, S-D 2014, Low-threshold InGaAs/GaAsSb 'W'-type quantum well laser on InP substrate. in CLEO: Science and Innovations, CLEO_SI 2014. Optics InfoBase Conference Papers, Optical Society of American (OSA), CLEO: Science and Innovations, CLEO_SI 2014, San Jose, CA, United States, 8/06/14. https://doi.org/10.1364/CLEO_SI.2014.STh3G.1

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T1 - Low-threshold InGaAs/GaAsSb 'W'-type quantum well laser on InP substrate

AU - Chang, Chia Hao

AU - Li, Zong Lin

AU - Lu, Hong Ting

AU - Lee, Chien Ping

AU - Lin, Sheng-Di

PY - 2014/6/8

Y1 - 2014/6/8

N2 - The mid-infrared electrically-driven laser using InGaAs/GaAsSb 'W'-type QWs is demonstrated at room temperature. The InP-based laser lasing at 2.35 Μm with the lowest threshold current density of 1.42 kA/cm2 is presented.

AB - The mid-infrared electrically-driven laser using InGaAs/GaAsSb 'W'-type QWs is demonstrated at room temperature. The InP-based laser lasing at 2.35 Μm with the lowest threshold current density of 1.42 kA/cm2 is presented.

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U2 - 10.1364/CLEO_SI.2014.STh3G.1

DO - 10.1364/CLEO_SI.2014.STh3G.1

M3 - Conference contribution

AN - SCOPUS:84906871386

SN - 9781557529992

T3 - Optics InfoBase Conference Papers

BT - CLEO

PB - Optical Society of American (OSA)

Y2 - 8 June 2014 through 13 June 2014

ER -