@inproceedings{1e4d5253d56749d79a2b0d7d103afa22,
title = "Low-threshold InGaAs/GaAsSb 'W'-type quantum well laser on InP substrate",
abstract = "The mid-infrared electrically-driven laser using InGaAs/GaAsSb 'W'-type QWs is demonstrated at room temperature. The InP-based laser lasing at 2.35 Μm with the lowest threshold current density of 1.42 kA/cm2 is presented.",
author = "Chang, {Chia Hao} and Li, {Zong Lin} and Lu, {Hong Ting} and Lee, {Chien Ping} and Sheng-Di Lin",
year = "2014",
month = jun,
day = "8",
doi = "10.1364/CLEO_SI.2014.STh3G.1",
language = "English",
isbn = "9781557529992",
series = "Optics InfoBase Conference Papers",
publisher = "Optical Society of American (OSA)",
booktitle = "CLEO",
note = "null ; Conference date: 08-06-2014 Through 13-06-2014",
}