Low-threshold InGaAs/GaAsSb 'W'-type quantum well laser on InP substrate

Chia Hao Chang, Zong Lin Li, Hong Ting Lu, Chien Ping Lee, Sheng-Di Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The mid-infrared electrically-driven laser using InGaAs/GaAsSb 'W'-type QWs is demonstrated at room temperature. The InP-based laser lasing at 2.35 Μm with the lowest threshold current density of 1.42 kA/cm2 is presented.

Original languageEnglish
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2014
PublisherOptical Society of American (OSA)
ISBN (Print)9781557529992
DOIs
StatePublished - 8 Jun 2014
EventCLEO: Science and Innovations, CLEO_SI 2014 - San Jose, CA, United States
Duration: 8 Jun 201413 Jun 2014

Publication series

NameOptics InfoBase Conference Papers
ISSN (Print)2160-8989
ISSN (Electronic)2162-2701

Conference

ConferenceCLEO: Science and Innovations, CLEO_SI 2014
CountryUnited States
CitySan Jose, CA
Period8/06/1413/06/14

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  • Cite this

    Chang, C. H., Li, Z. L., Lu, H. T., Lee, C. P., & Lin, S-D. (2014). Low-threshold InGaAs/GaAsSb 'W'-type quantum well laser on InP substrate. In CLEO: Science and Innovations, CLEO_SI 2014 (Optics InfoBase Conference Papers). Optical Society of American (OSA). https://doi.org/10.1364/CLEO_SI.2014.STh3G.1