Low threshold current, low resistance 1.3 μm InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE

Hsin-Chieh Yu*, Jyh Shyang Wang, Yan Kuin Su, Shoou Jinn Chang, Hao-Chung Kuo, Fang I. Lai, Y. H. Chang, Hong Pin D. Yang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

The processing technology of 1.3μm InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE will be demonstrated. The threshold currents of the fabricated devices with 10 μm oxide-confined aperture are 0.7mA, which correspond to 890A/cm 2 threshold current density. And the threshold voltage of the device is 1.03V and maximum output power is 33 μW. The series resistance is 85 Ω which is 10 times lower then our preliminary work and 3 times lower then intracavity contacted InAs-InGaAs quantum-dot VCSEL. This relatively lower resistance can even comparable with the best result reported in InGaAs oxide-confined VCSELs with intracavity contact.

Original languageEnglish
Title of host publicationVertical-Cavity Surface-Emitting Lasers XI
DOIs
StatePublished - 24 May 2007
EventVertical-Cavity Surface-Emitting Lasers XI - San Jose, CA, United States
Duration: 24 Jan 200725 Jan 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6484
ISSN (Print)0277-786X

Conference

ConferenceVertical-Cavity Surface-Emitting Lasers XI
CountryUnited States
CitySan Jose, CA
Period24/01/0725/01/07

Keywords

  • 1.3 μm
  • Fully doped DBR
  • InAs-InGaAs
  • MBE
  • Quantum dot
  • VCSEL

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