Low-temperature wafer-scale fabrication of carbon nanotube network TFT: Geometry effect and transport mechanism

Hsiao Yu Chang*, Bing-Yue Tsui

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

In this work, we propose a simple method to form uniform carbon nanotube network (CNTN) in wafer-scale, which is completely compatible to thin-film transistors (TFTs) process and can achieve large-area uniformity and stable device performance. From the plot of on-current versus off-current, it is clear that devices with various dimensions are divided into two groups, and the threshold value for these two groups was determined by device dimension compared to the length of CNT. The transport mechanisms of the CNTN TFTs of on-state and off-state identified by temperature-dependent measurement are thermal emission and band-to-band tunneling, respectively.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
StatePublished - 26 Sep 2011
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 21 Jun 201124 Jun 2011

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Conference

Conference4th IEEE International Nanoelectronics Conference, INEC 2011
CountryTaiwan
CityTao-Yuan
Period21/06/1124/06/11

Keywords

  • carbon nanotube
  • CNT
  • TFT
  • thin film transistor

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    Chang, H. Y., & Tsui, B-Y. (2011). Low-temperature wafer-scale fabrication of carbon nanotube network TFT: Geometry effect and transport mechanism. In 4th IEEE International NanoElectronics Conference, INEC 2011 [5991666] (Proceedings - International NanoElectronics Conference, INEC). https://doi.org/10.1109/INEC.2011.5991666