Low-Temperature Wafer-Level Metal Bonding with Gold Thin Film at 100 °c

Po Chih Chen, Demin Liu, Kuan Neng Chen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, gold is utilized as a thin film material to achieve low-Temperature thermocompression bonding (TCB) at 100°C. The gold thin film can reduce the copper bonding temperature and avoid the formation of intermetallic compounds (IMCs). Additionally, gold has a lower hardness compared to copper, and surface roughness can be reduced with a gold thin film on the copper. Gold layer has high chemical stability and can protect the redistribution layer (RDL) from oxidation. These properties are helpful during the TCB process. Furthermore, based on the several performance tests, gold can provide a reliable bonding structure.

Original languageEnglish
Title of host publicationIEEE 2019 International 3D Systems Integration Conference, 3DIC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728148700
DOIs
StatePublished - Oct 2019
Event2019 IEEE International 3D Systems Integration Conference, 3DIC 2019 - Sendai, Japan
Duration: 8 Oct 201910 Oct 2019

Publication series

NameIEEE 2019 International 3D Systems Integration Conference, 3DIC 2019

Conference

Conference2019 IEEE International 3D Systems Integration Conference, 3DIC 2019
CountryJapan
CitySendai
Period8/10/1910/10/19

Fingerprint Dive into the research topics of 'Low-Temperature Wafer-Level Metal Bonding with Gold Thin Film at 100 °c'. Together they form a unique fingerprint.

Cite this