Low-temperature thermal oxide to plasma-enhanced chemical vapor deposition oxide wafer bonding for thin-film transfer application

C. S. Tan*, A. Fan, Kuan-Neng Chen, R. Reif

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

47 Scopus citations

Abstract

A study of low-temperature direct plasma-enhanced chemical vapor deposition (PECVD) oxide to thermal oxide bonding was carried out. The PECVD is densified at 350°C and chemically-mechanically polished to obtain reasonably smooth surface for bonding. A void-free bonding interface was observed from infrared imaging and the bonding strength is estimated to be 432 mJ/m2.

Original languageEnglish
Pages (from-to)2649-2651
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number16
DOIs
StatePublished - 21 Apr 2003

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