Low-temperature study of lasing characteristics for 1.3-μm AlGaInAs quantum-well laser pumped by an actively Q-switched Nd:YAG laser

Kuan-Wei Su, Yi Fan Chen, S. C. Huang, A. Li, S. C. Liu, Yung-Fu Chen, Kai-Feng Huang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report a low-temperature 1.3μm AlGaInAs quantum-well laser pumped by a 1.06μm active Q-switched laser quenched by a low-temperature vacuum system. An average power of 330mW is achieved at temperature as low as 233K compared to the average power of 50mW obtained at room-temperature without cooling device both at pumping repetition rate of 30 kHz. And the average rate of gain peak shift was found to be 0.47 nm/K between 293-133 K.

Original languageEnglish
Title of host publicationSolid State Lasers XIX
Subtitle of host publicationTechnology and Devices
DOIs
StatePublished - 7 May 2010
EventSolid State Lasers XIX: Technology and Devices - San Francisco, CA, United States
Duration: 24 Jan 201028 Jan 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7578
ISSN (Print)0277-786X

Conference

ConferenceSolid State Lasers XIX: Technology and Devices
CountryUnited States
CitySan Francisco, CA
Period24/01/1028/01/10

Keywords

  • AlGaInAs
  • Quantum well
  • VECSEL

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