Low-temperature sol-gel oxide TFT with a fluoropolymer dielectric to enhance the effective mobility at low operation voltage

Shang Yu Yu, Kuan Hsun Wang, Hsiao-Wen Zan, Olivier Soppera

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

In this article, we propose a solution-processed high-performance amorphous indium-zinc oxide (a-IZO) thin-film transistor (TFT) gated with a fluoropolymer dielectric. Compared with a conventional IZO TFT with a silicon nitride dielectric, a fluoropolymer dielectric effectively reduces the operation voltage to less than 3V and greatly increases the effective mobility 40-fold. We suggest that the dipole layer formed at the dielectric surface facilitates electron accumulation and induces the electric double-layer effect. The dipole-induced hysteresis effect is also investigated.

Original languageEnglish
Article number060303
JournalJapanese Journal of Applied Physics
Volume56
Issue number6
DOIs
StatePublished - 1 Jun 2017

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