Low-temperature redistribution of As in Si during Ni silicide formation

I. Ohdomari*, M. Akiyama, T. Maeda, M. Hori, C. Takebayashi, A. Ogura, T. Chikyo, I. Kimura, K. Yoneda, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

35 Scopus citations

Abstract

We have investigated the redistribution of implanted As during Ni 2Si formation at 275 and 300°C and NiSi formation at 400 to 700°C with neutron activation analysis and Hall effect measurement. Some of the implanted As atoms were found to redistribute themselves near the silicide-Si interface during both Ni2Si and NiSi formation. The depth of the redistribution extends about 100 Å into Si and is affected slightly by the formation temperature of NiSi. A fraction of the redistributed As is electrically active and the fraction increases with the annealing temperature. The maximum electrical activity of redistributed As during NiSi formation at 700°C is estimated to be 6.5%.

Original languageEnglish
Pages (from-to)2725-2728
Number of pages4
JournalJournal of Applied Physics
Volume56
Issue number10
DOIs
StatePublished - 1 Dec 1984

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