Low temperature processes of organic thin film transistor with gate dielectric of silicon dioxide deposited by scanning atmospheric-pressure technology

Kow-Ming Chang, S. S. Huang, C. H. Lin, S. H. Huang, Y. M. Wu, H. C. Pan, M. I. Hsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have successfully fabricated pentacene-based organic thin film transistor at a low temperature process with silicon oxide as a gate dielectric deposited by scanning atmospheric-pressure plasma technology (SAPPT). The major merit of scanning atmospheric-pressure plasma technology was low deposition temperature at one standard atmosphere which was suitable for the application of flexible electrons. The organic thin film transistor demonstrated in this study could operate at the voltage less than -5V and the leakage current of silicon oxide dielectric with MIM structure is about 2.5E-8 A/cm27 at 0.5 MV/cm. The low operation voltage and low leakage current properties are required in portable applications.

Original languageEnglish
Title of host publicationECS Transactions - Organic Semiconductor Materials and Devices
Pages59-65
Number of pages7
Edition25
DOIs
StatePublished - 24 Dec 2008
EventOrganic Semiconductor Materials and Devices - 212th ECS Meeting - Washington, DC, United States
Duration: 7 Oct 200712 Oct 2007

Publication series

NameECS Transactions
Number25
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceOrganic Semiconductor Materials and Devices - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period7/10/0712/10/07

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