Low-temperature process to improve the leakage current of (Ba, Sr)TiO3 films on Pt/TiN/Ti/Si substrates

Chuan Chou Hwang, Ming Jiunn Lai, Cheng Chung Jaing, Jyh Shin Chen, Stewart Huang, Miin Horng Juang, Huang-Chung Cheng

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4 Scopus citations


In this study, we employed an oxygen plasma post-treatment to improve the leakage characteristics of Pt/(Ba, Sr)TiO3(BST)/Pt capacitors prepared by the RF cosputtering technique. Applying oxygen plasma treatment to BST thin films can effectively passivate the oxygen vacancies of the BST films, thus decreasing the electric conduction paths of leakage current. The leakage current is reduced by as many as two orders of magnitude by this low-temperature (250 °C) and short duration (approximately 5 min) process. However, the usage of oxygen plasma treatment is not unrestricted. Plasma treatment over a long time (more than 10 min) degrades the leakage characteristics, due to plasma damage. Therefore, a proper oxygen plasma treatment for as-deposited BST films is desired to improve leakage characteristics of BST thin films.

Original languageEnglish
Pages (from-to)L1314-L1316
JournalJapanese journal of applied physics
Issue number12 B
StatePublished - 15 Dec 2000

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