Low-temperature preparation of perovskite Pb(Sc0.5Ta0.5) O3 thin films using MOCVD

Donhang Liu, Haydn Chen*

*Corresponding author for this work

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

Single perovskite phase Pb(Sc0.5Ta0.5)O3 (PST) thin films have been grown using an one-stage MOCVD method. The processing temperature was 600°C. The film structure as a function of Pb/(Sc + Ta) flow ratio was determined using X-ray diffraction (XRD) and scanning electron microscopy (SEM).

Original languageEnglish
Pages (from-to)17-20
Number of pages4
JournalMaterials Letters
Volume28
Issue number1-3
DOIs
StatePublished - 1 Jan 1996

Keywords

  • Ferroelectric
  • Imaging
  • Lead scandium tantalate
  • Low temperature deposition
  • MOCVD
  • Perovskite
  • Pyroelectric
  • Silicon substrates
  • Thin films

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