Low-temperature power device: A new poly-si high-voltage LDMOS with excimer laser crystallization

Fang Long Chang*, Ming Jang Lin, C. W. Liaw, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

A new low-temperature polysilicon high-voltage LDMOS (LTPS HVLDMOS) using excimer laser crystallization has been proposed for the first time. However, in order to enhance LTPS HVLDMOS characteristics, there are two starting points: 1) integrate the thin-film technology with the power device, and 2) clarify the requirement of excimer laser treatment for low-temperature power devices. As the result, the on/off current ratio after laser treatment is improved over 106 times than that before laser treatment at Ldrift = 15μm and Vds = 25 V. The LTPS HVLDMOS after laser treatment also demonstrates the better tradeoff between the specific on resistance and breakdown voltage against the previous high-voltage thin-film transistors (HVTFTs) by solid-phase crystallization - such as semi-insulating (SI), metal field-plated, and offset-drain HVTFTs.

Original languageEnglish
Pages (from-to)547-549
Number of pages3
JournalIEEE Electron Device Letters
Volume25
Issue number8
DOIs
StatePublished - 1 Aug 2004

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