Low-temperature polycrystalline-silicon tunneling thin-film transistors with MILC

Yi Hsuan Chen, Li Chen Yen, Tien Shun Chang, Tsung Yu Chiang, Po Yi Kuo, Tien-Sheng Chao

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

It is known that metal-induced lateral crystallization (MILC) thin-film transistors (TFTs) exhibit higher on-state current, steeper subthreshold slope, and lower minimum leakage than solid-phase-crystallization TFTs. In this letter, we propose a tunneling TFT (T-TFT) fabricated by MILC method for the first time. The MILC T-TFTs demonstrate a lower subthreshold swing, ∼ 232mV decade, than the other T-TFTs and a high ON/OFF ratio >10 6 at VDS=1 V without any hydrogen-related plasma treatment. These improvements can be due to the reduction of defects at grain boundaries and the channel direction parallel to grains. The polycrystalline silicon T-TFTs fabricated in this letter show a great promise for low standby power circuits, drivers of active-matrix liquid crystal displays, and 3-D integrated circuits applications in the future.

Original languageEnglish
Article number6544264
Pages (from-to)1017-1019
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number8
DOIs
StatePublished - 7 Aug 2013

Keywords

  • Metal-induced lateral crystallization (MILC)
  • poly-Si thin-film transistor (poly-Si TFTs)
  • tunneling field-effect-transistor (TFET)

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