Low temperature polycrystalline Si nanowire devices with gate-all-around Al 2 O 3 /TiN structure using an implant-free technique

T. I. Tsai*, Tien-Sheng Chao, C. J. Su, H. C. Lin, T. Y. Huang, Horng-Chih Lin, Y. J. Wei

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, for the first time, we propose and demonstrate an implant-free gate-all-around (GAA) low-temperature poly-Si (LTPS) nanowire (NW) device with Al 2 O 3 dielectric and TiN gate. Since the channel and source/drain (S/D) regions are sharing one in-situ phosphorous-doped poly-Si material, the process cost could be efficiently reduced. Such novel scheme appears to be promising for both system-on-panel (SOP) and three dimensional IC applications. High on-off current ratio and on-state performance are demonstrated for the new device.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
StatePublished - 26 Sep 2011
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 21 Jun 201124 Jun 2011

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Conference

Conference4th IEEE International Nanoelectronics Conference, INEC 2011
CountryTaiwan
CityTao-Yuan
Period21/06/1124/06/11

Keywords

  • gate-all-around (GAA)
  • in-situ doped channel
  • low temperature poly-Si (LTPS)
  • Si nanowire (Si NW)

Fingerprint Dive into the research topics of 'Low temperature polycrystalline Si nanowire devices with gate-all-around Al <sub>2</sub> O <sub>3</sub> /TiN structure using an implant-free technique'. Together they form a unique fingerprint.

  • Cite this

    Tsai, T. I., Chao, T-S., Su, C. J., Lin, H. C., Huang, T. Y., Lin, H-C., & Wei, Y. J. (2011). Low temperature polycrystalline Si nanowire devices with gate-all-around Al 2 O 3 /TiN structure using an implant-free technique. In 4th IEEE International NanoElectronics Conference, INEC 2011 [5991733] (Proceedings - International NanoElectronics Conference, INEC). https://doi.org/10.1109/INEC.2011.5991733