Low-temperature poly-si thin-film transistor with a N2O-plasma ONO multilayer gate dielectric

Kow-Ming Chang*, Wen Chih Yang, Bing Fang Hung

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

High-performance polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with oxide/nitride/oxynitride (ONO) multilayer gate dielectrics were fabricated. The low-temperature (≦300°C) ONO multilayer dielectric uses three stacked layers: the bottom layer is a very thin N2O-plasma oxynitride deposited by plasma-enhanced chemical vapor deposition (PECVD), the middle layer is PECVD Si3N4, and the top layer is tetraethoxysilane (TEOS) oxide. The ONO gate dielectric on poly-Si films shows a very high breakdown field of 9.4 MV/cm, a longer time-dependent dielectric breakdown lifetime and a lower charge trapping rate than single-layer PECVD TEOS oxide or nitride. The fabricated poly-Si TFTs with ONO gate dielectric exhibited excellent transfer characteristics, high field-effect mobility of 213 cm2/V s, and an ON/OFF current ratio of over 108.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume7
Issue number7
DOIs
StatePublished - 20 Jul 2004

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