Low-temperature poly-si thin-film transistor with a N2O-plasma ONO multilayer gate dielectric

Kow-Ming Chang; Wen Chih Yang; Bing Fang Hung

doi:10.1149/1.1753253

Low-temperature poly-si thin-film transistor with a N₂O-plasma ONO multilayer gate dielectric

Kow-Ming Chang^*, Wen Chih Yang, Bing Fang Hung

^*Corresponding author for this work

National Chiao Tung University

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

High-performance polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with oxide/nitride/oxynitride (ONO) multilayer gate dielectrics were fabricated. The low-temperature (≦300°C) ONO multilayer dielectric uses three stacked layers: the bottom layer is a very thin N₂O-plasma oxynitride deposited by plasma-enhanced chemical vapor deposition (PECVD), the middle layer is PECVD Si₃N₄, and the top layer is tetraethoxysilane (TEOS) oxide. The ONO gate dielectric on poly-Si films shows a very high breakdown field of 9.4 MV/cm, a longer time-dependent dielectric breakdown lifetime and a lower charge trapping rate than single-layer PECVD TEOS oxide or nitride. The fabricated poly-Si TFTs with ONO gate dielectric exhibited excellent transfer characteristics, high field-effect mobility of 213 cm²/V s, and an ON/OFF current ratio of over 10⁸.

Original language	English
Journal	Electrochemical and Solid-State Letters
Volume	7
Issue number	7
DOIs	https://doi.org/10.1149/1.1753253
State	Published - 20 Jul 2004

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title = "Low-temperature poly-si thin-film transistor with a N2O-plasma ONO multilayer gate dielectric",

abstract = "High-performance polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with oxide/nitride/oxynitride (ONO) multilayer gate dielectrics were fabricated. The low-temperature (≦300°C) ONO multilayer dielectric uses three stacked layers: the bottom layer is a very thin N2O-plasma oxynitride deposited by plasma-enhanced chemical vapor deposition (PECVD), the middle layer is PECVD Si3N4, and the top layer is tetraethoxysilane (TEOS) oxide. The ONO gate dielectric on poly-Si films shows a very high breakdown field of 9.4 MV/cm, a longer time-dependent dielectric breakdown lifetime and a lower charge trapping rate than single-layer PECVD TEOS oxide or nitride. The fabricated poly-Si TFTs with ONO gate dielectric exhibited excellent transfer characteristics, high field-effect mobility of 213 cm2/V s, and an ON/OFF current ratio of over 108.",

author = "Kow-Ming Chang and Yang, {Wen Chih} and Hung, {Bing Fang}",

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T1 - Low-temperature poly-si thin-film transistor with a N2O-plasma ONO multilayer gate dielectric

AU - Chang, Kow-Ming

AU - Yang, Wen Chih

AU - Hung, Bing Fang

PY - 2004/7/20

Y1 - 2004/7/20

N2 - High-performance polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with oxide/nitride/oxynitride (ONO) multilayer gate dielectrics were fabricated. The low-temperature (≦300°C) ONO multilayer dielectric uses three stacked layers: the bottom layer is a very thin N2O-plasma oxynitride deposited by plasma-enhanced chemical vapor deposition (PECVD), the middle layer is PECVD Si3N4, and the top layer is tetraethoxysilane (TEOS) oxide. The ONO gate dielectric on poly-Si films shows a very high breakdown field of 9.4 MV/cm, a longer time-dependent dielectric breakdown lifetime and a lower charge trapping rate than single-layer PECVD TEOS oxide or nitride. The fabricated poly-Si TFTs with ONO gate dielectric exhibited excellent transfer characteristics, high field-effect mobility of 213 cm2/V s, and an ON/OFF current ratio of over 108.

AB - High-performance polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with oxide/nitride/oxynitride (ONO) multilayer gate dielectrics were fabricated. The low-temperature (≦300°C) ONO multilayer dielectric uses three stacked layers: the bottom layer is a very thin N2O-plasma oxynitride deposited by plasma-enhanced chemical vapor deposition (PECVD), the middle layer is PECVD Si3N4, and the top layer is tetraethoxysilane (TEOS) oxide. The ONO gate dielectric on poly-Si films shows a very high breakdown field of 9.4 MV/cm, a longer time-dependent dielectric breakdown lifetime and a lower charge trapping rate than single-layer PECVD TEOS oxide or nitride. The fabricated poly-Si TFTs with ONO gate dielectric exhibited excellent transfer characteristics, high field-effect mobility of 213 cm2/V s, and an ON/OFF current ratio of over 108.

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Low-temperature poly-si thin-film transistor with a N2O-plasma ONO multilayer gate dielectric

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Low-temperature poly-si thin-film transistor with a N₂O-plasma ONO multilayer gate dielectric