Low temperature oxygen dissolution in titanium

G. Ottaviani*, F. Nava, G. Queirolo, G. Iannuzzi, G. de Santi, King-Ning Tu

*Corresponding author for this work

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In situ resistivity measurements, X-ray diffraction, 4He+ megaelectronvolt backscattering and Auger electron spectrometry were used to investigate the effect of oxygen diffusion on the electrical properties of a thin titanium film deposited onto silicon and heated at temperatures below 500°C. The annealing was performed in a vacuum of 10-5 Pa and in a hot purified helium furnace. The vacuum-annealed samples show a sharp increase in resistivity around 300°C. The increase is not due to silicon diffusion but is attributed to oxygen contamination. The presence of oxygen deforms the hexagonal structure of the titanium; the bond length along the c axis increases proportionally to the resistivity of the film. Annealing at temperatures higher than 500°C promotes silicide formation. The oxygen contained in the titanium film is segregated towards the outermost surface.

Original languageEnglish
Pages (from-to)201-207
Number of pages7
JournalThin Solid Films
Issue number2
StatePublished - 16 Jan 1987

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    Ottaviani, G., Nava, F., Queirolo, G., Iannuzzi, G., de Santi, G., & Tu, K-N. (1987). Low temperature oxygen dissolution in titanium. Thin Solid Films, 146(2), 201-207. https://doi.org/10.1016/0040-6090(87)90222-7