Low temperature operation of Si and SiGe bipolar transistors

E. F. Crabbe*, G. L. Patton, J. M.C. Stork, J. H. Comfort, B. S. Meyerson, J. Y.C. Sun

*Corresponding author for this work

Research output: Contribution to journalConference article

35 Scopus citations

Abstract

The operation of Si and SiGe epitaxial-base bipolar transistors at liquid nitrogen temperature is demonstrated to be comparable or superior to that at room temperature. Tunneling leakage at the emitter-base junction is suppressed at all temperatures as a result of a lightly doped spacer. The maximum current gain of both the Si and the SiGe devices shows a very small temperature dependence. Monte Carlo simulations of a Si-base transistor at 77 K indicate the presence of velocity overshoot, which is supported by the higher current density at the onset of base pushout. The peak cutoff frequency at 85 K is 57 GHz for the Si transistor and 94 GHz for the SiGe transistor, respectively 8% and 25% higher than at 298 K.

Original languageEnglish
Pages (from-to)17-20
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - Dec 1990
Event1990 International Electron Devices Meeting - San Francisco, CA, USA
Duration: 9 Dec 199012 Dec 1990

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