Low temperature ohmic contact for p-type GaN using Mg electrodes

K. Kakushima, Y. Ikeuchi, T. Hoshii, I. Muneta, H. Wakabayashi, K. Tsutsui, H. Iwai, T. Kikuchi, S. Ishikawa

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Low Ohmic contact for p-type GaN (pGaN) has been of great importance for various applications including light emitting diodes and nitride based power devices. Although a low contact resistance (ρc) of the order of 10-6 Ωcm2 can be obtained with air-annealed Au/Ni electrodes, the hole transport relies on NiO islands inhomogeneously formed between the Au and the pGaN surface, giving concerns in long term reliability [1]. For Ti-based electrodes, on the other hand, an Ohmic contact can be achieved by forming an intermixed layer at the interface of the metal and pGaN surface, yet a relatively high temperature is required. Moreover, the ρc is reported to degrade along with time due to in-diffusion of hydrogen atoms stored in the metal layer during the high temperature annealing [2].

Original languageEnglish
Title of host publication17th International Workshop on Junction Technology, IWJT 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages85-86
Number of pages2
ISBN (Electronic)9784863486263
DOIs
StatePublished - 30 Jun 2017
Event17th International Workshop on Junction Technology, IWJT 2017 - Kyoto, Japan
Duration: 1 Jun 20172 Jun 2017

Publication series

Name17th International Workshop on Junction Technology, IWJT 2017

Conference

Conference17th International Workshop on Junction Technology, IWJT 2017
CountryJapan
CityKyoto
Period1/06/172/06/17

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