Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectrics and metal gate electrode

Shiyang Zhu, Shen Chen, Zhu Chunxiang, H. Y. Yu, S. J. Whang, J. H. Chen, S. J. Lee, M. F. Li, D. S.H. Chan, W. J. Yoo, Anyan Du, C. H. Tung, Jagar Singh, Albert Chin, D. L. Kwong

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Introduction Future CMOS devices require metal-gatehigh-K gate stacks, advanced sourceidrain engineering, and the use of UTB-SO1 [1-3]. The series resistance of shallow sourceidrain junction is a serious issue for future scaling, and Schottky barrier SiD (SSD) structure has been suggested as a potential solution [4-7]. MOSFETs with SSD (SSDT) have been reported using SiO22/ poly-Si gate stack [8]. However, SSDT is particularly attractive for metal gate/high-K gate stack as it avoids the use of high temperature annealing process required for implanted S/D junctions, hence eliminating the thermal stability issues associated with high-K gate stack [9]. In this work, we successfully demonstrate bulk SSDTs with CVD Hf02 high-K dielectric, PVD HfN/TaN metal gate and P'tSi (for PMOS) and DySi2-x(for NMOS) silicide source/drain using a low temperature process. The highest temperature is 420°C after high-K gate stack formation. The process can be easily extended to UTB-SOI structures.

Original languageEnglish
Title of host publication2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages254-255
Number of pages2
ISBN (Electronic)0780381394, 9780780381391
DOIs
StatePublished - 1 Jan 2003
EventInternational Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States
Duration: 10 Dec 200312 Dec 2003

Publication series

Name2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Conference

ConferenceInternational Semiconductor Device Research Symposium, ISDRS 2003
CountryUnited States
CityWashington
Period10/12/0312/12/03

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