Low-temperature microwave annealing processes for future IC fabrication

Yao Jen Lee, Bo An Tsai, Ta Chun Cho, Fu Kuo Hsueh, Po Jung Sung, Chiung Hui Lai, Chih-Wei Luo, Tien-Sheng Chao

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Low temperature microwave annealing (MWA) for IC processing is promising. In this study, using microwave annealing for dopant activation and thermal stability of the high-k/metal gate is investigated. Implanted species, such as phosphorus, arsenic, and boron, can also be well-activated and diffusionless in Si after microwave annealing. The flat band voltage shift of metal gate was suppressed due to the low temperature process. The increases in equivalent oxide thickness (EOT) of the MOS devices after dopant activation processing can be eliminated by using low temperature MWA. In addition, the short channel effects in n & pMOSFETs annealed by MWA can be also improved due to the suppression of dopant diffusion and stabilization of EOT.

Original languageEnglish
Title of host publication2014 IEEE International Nanoelectronics Conference, INEC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479950379
DOIs
StatePublished - 26 Apr 2016
EventIEEE International Nanoelectronics Conference, INEC 2014 - Sapporo, Japan
Duration: 28 Jul 201431 Jul 2014

Publication series

Name2014 IEEE International Nanoelectronics Conference, INEC 2014

Conference

ConferenceIEEE International Nanoelectronics Conference, INEC 2014
CountryJapan
CitySapporo
Period28/07/1431/07/14

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