Low-temperature microwave annealing process for dopant activation and thermal stability of TiN material

Bo An Tsai*, Chiung Hui Lai, Bo Shiun Lee, Chih-Wei Luo, Yao Jen Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this study, using microwave annealing for dopant activation and thermal stability of the TiN gate electrode is investigated. Workfunction shift of TiN materials was suppressed due to the low temperature process. Implanted species, such as phosphorus, arsenic, and boron, can also be well-activated and diffusionless in Si after microwave annealing. Moreover, analysis of X-ray diffraction intensity can be used to explain the workfunction shift of the TiN materials.

Original languageEnglish
Pages (from-to) H185-H187
Number of pages3
JournalElectrochemical and Solid-State Letters
Volume15
Issue number6
DOIs
StatePublished - 7 May 2012

Fingerprint Dive into the research topics of 'Low-temperature microwave annealing process for dopant activation and thermal stability of TiN material'. Together they form a unique fingerprint.

Cite this