Low temperature (<180°c) bonding for 3D integration

Yan Pin Huang*, Ruoh Ning Tzeng, Yu San Chien, Ming Shaw Shy, Teu Hua Lin, Kou Hua Chen, Ching-Te Chuang, Wei Hwang, Chi Tsung Chiu, Ho Ming Tong, Kuan-Neng Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Three types of bonding, including Cu-In, Sn/In-Cu, and Cu/Ti-Ti/Cu, are investigated for the application of 3D interconnects. Cu-In bonding and Sn/In-Cu bonding can form intermetallic compounds at the bonding temperature lower than 180 °C. In addition, for Cu/Ti-Ti/Cu bonding, Cu can be protected from oxidation by capping Ti on Cu surface before bonding. This method can further decrease bonding temperature. All bonded structures have shown excellent electrical performance and reliability characteristics. Based on bond results, these structures can be applied for low temperature bonding in 3D interconnects.

Original languageEnglish
Title of host publication2013 IEEE International 3D Systems Integration Conference, 3DIC 2013
PublisherIEEE
ISBN (Print)9781467364843
DOIs
StatePublished - 1 Dec 2013
Event2013 IEEE International 3D Systems Integration Conference, 3DIC 2013 - San Francisco, CA, United States
Duration: 2 Oct 20134 Oct 2013

Publication series

Name2013 IEEE International 3D Systems Integration Conference, 3DIC 2013

Conference

Conference2013 IEEE International 3D Systems Integration Conference, 3DIC 2013
CountryUnited States
CitySan Francisco, CA
Period2/10/134/10/13

Keywords

  • 3D integration
  • Bonding technology
  • interconnects

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