Low temperature improvement method on Zn:SiOx resistive random access memory devices

Kuan Chang Chang*, Tsung Ming Tsai, Ting Chang Chang, Hsing Hua Wu, Kai Huang Chen, Jung Hui Chen, Tai Fa Young, Tian Jian Chu, Jian Yu Chen, Chih Hung Pan, Yu Ting Su, Yong En Syu, Cheng Wei Tung, Geng Wei Chang, Min Chen Chen, Hui Chun Huang, Ya-Hsiang Tai, Der Shin Gan, Jia Jie Wu, Ying HuSimon M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

To improve the resistive switching properties of the resistive random access memory (RRAM), the supercritical carbon dioxide (SCCO2) fluid is used as a low temperature treatment. In this letter, the Zn:SiOx thin films are treated by SCCO2 fluid mixed with pure water. After SCCO2 fluid treatment, the resistive switching qualities of the Zn:SiOx thin films are carried out by XPS, fourier transform infrared spectroscopy, and IV measurement. We believe that the SCCO2-treated Zn:SiOx thin film is a promising material for RRAM applications due to its compatibility with portable flat panel display.

Original languageEnglish
Article number6479230
Pages (from-to)511-513
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number4
DOIs
StatePublished - 5 Apr 2013

Keywords

  • Nonvolatile memory
  • resistive switching
  • silicon oxide
  • zinc

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