Low temperature improvement method on Zn:SiOx resistive random access memory devices

Kuan Chang Chang; Tsung Ming Tsai; Ting Chang Chang; Hsing Hua Wu; Kai Huang Chen; Jung Hui Chen; Tai Fa Young; Tian Jian Chu; Jian Yu Chen; Chih Hung Pan; Yu Ting Su; Yong En Syu; Cheng Wei Tung; Geng Wei Chang; Min Chen Chen; Hui Chun Huang; Ya-Hsiang Tai; Der Shin Gan; Jia Jie Wu; Ying Hu; Simon M. Sze

doi:10.1109/LED.2013.2248075

Low temperature improvement method on Zn:SiO_x resistive random access memory devices

Kuan Chang Chang^*, Tsung Ming Tsai, Ting Chang Chang, Hsing Hua Wu, Kai Huang Chen, Jung Hui Chen, Tai Fa Young, Tian Jian Chu, Jian Yu Chen, Chih Hung Pan, Yu Ting Su, Yong En Syu, Cheng Wei Tung, Geng Wei Chang, Min Chen Chen, Hui Chun Huang, Ya-Hsiang Tai, Der Shin Gan, Jia Jie Wu, Ying HuSimon M. Sze

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

To improve the resistive switching properties of the resistive random access memory (RRAM), the supercritical carbon dioxide (SCCO₂) fluid is used as a low temperature treatment. In this letter, the Zn:SiO_x thin films are treated by SCCO₂ fluid mixed with pure water. After SCCO₂ fluid treatment, the resistive switching qualities of the Zn:SiO_x thin films are carried out by XPS, fourier transform infrared spectroscopy, and IV measurement. We believe that the SCCO₂-treated Zn:SiO_x thin film is a promising material for RRAM applications due to its compatibility with portable flat panel display.

Original language	English
Article number	6479230
Pages (from-to)	511-513
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	4
DOIs	https://doi.org/10.1109/LED.2013.2248075
State	Published - 5 Apr 2013

Keywords

Nonvolatile memory
resistive switching
silicon oxide
zinc

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Chang, K. C., Tsai, T. M., Chang, T. C., Wu, H. H., Chen, K. H., Chen, J. H., Young, T. F., Chu, T. J., Chen, J. Y., Pan, C. H., Su, Y. T., Syu, Y. E., Tung, C. W., Chang, G. W., Chen, M. C., Huang, H. C., Tai, Y-H., Gan, D. S., Wu, J. J., ... Sze, S. M. (2013). Low temperature improvement method on Zn:SiO_x resistive random access memory devices. IEEE Electron Device Letters, 34(4), 511-513. [6479230]. https://doi.org/10.1109/LED.2013.2248075

Chang, Kuan Chang ; Tsai, Tsung Ming ; Chang, Ting Chang ; Wu, Hsing Hua ; Chen, Kai Huang ; Chen, Jung Hui ; Young, Tai Fa ; Chu, Tian Jian ; Chen, Jian Yu ; Pan, Chih Hung ; Su, Yu Ting ; Syu, Yong En ; Tung, Cheng Wei ; Chang, Geng Wei ; Chen, Min Chen ; Huang, Hui Chun ; Tai, Ya-Hsiang ; Gan, Der Shin ; Wu, Jia Jie ; Hu, Ying ; Sze, Simon M. / Low temperature improvement method on Zn:SiO_x resistive random access memory devices. In: IEEE Electron Device Letters. 2013 ; Vol. 34, No. 4. pp. 511-513.

@article{b1dd84a4e76b4a9885ad22b5872beb74,

title = "Low temperature improvement method on Zn:SiOx resistive random access memory devices",

abstract = "To improve the resistive switching properties of the resistive random access memory (RRAM), the supercritical carbon dioxide (SCCO2) fluid is used as a low temperature treatment. In this letter, the Zn:SiOx thin films are treated by SCCO2 fluid mixed with pure water. After SCCO2 fluid treatment, the resistive switching qualities of the Zn:SiOx thin films are carried out by XPS, fourier transform infrared spectroscopy, and IV measurement. We believe that the SCCO2-treated Zn:SiOx thin film is a promising material for RRAM applications due to its compatibility with portable flat panel display.",

keywords = "Nonvolatile memory, resistive switching, silicon oxide, zinc",

author = "Chang, {Kuan Chang} and Tsai, {Tsung Ming} and Chang, {Ting Chang} and Wu, {Hsing Hua} and Chen, {Kai Huang} and Chen, {Jung Hui} and Young, {Tai Fa} and Chu, {Tian Jian} and Chen, {Jian Yu} and Pan, {Chih Hung} and Su, {Yu Ting} and Syu, {Yong En} and Tung, {Cheng Wei} and Chang, {Geng Wei} and Chen, {Min Chen} and Huang, {Hui Chun} and Ya-Hsiang Tai and Gan, {Der Shin} and Wu, {Jia Jie} and Ying Hu and Sze, {Simon M.}",

year = "2013",

month = apr,

day = "5",

doi = "10.1109/LED.2013.2248075",

language = "English",

volume = "34",

pages = "511--513",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

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Chang, KC, Tsai, TM, Chang, TC, Wu, HH, Chen, KH, Chen, JH, Young, TF, Chu, TJ, Chen, JY, Pan, CH, Su, YT, Syu, YE, Tung, CW, Chang, GW, Chen, MC, Huang, HC, Tai, Y-H, Gan, DS, Wu, JJ, Hu, Y & Sze, SM 2013, 'Low temperature improvement method on Zn:SiO_x resistive random access memory devices', IEEE Electron Device Letters, vol. 34, no. 4, 6479230, pp. 511-513. https://doi.org/10.1109/LED.2013.2248075

Low temperature improvement method on Zn:SiO_x resistive random access memory devices. / Chang, Kuan Chang; Tsai, Tsung Ming; Chang, Ting Chang; Wu, Hsing Hua; Chen, Kai Huang; Chen, Jung Hui; Young, Tai Fa; Chu, Tian Jian; Chen, Jian Yu; Pan, Chih Hung; Su, Yu Ting; Syu, Yong En; Tung, Cheng Wei; Chang, Geng Wei; Chen, Min Chen; Huang, Hui Chun; Tai, Ya-Hsiang; Gan, Der Shin; Wu, Jia Jie; Hu, Ying; Sze, Simon M.

In: IEEE Electron Device Letters, Vol. 34, No. 4, 6479230, 05.04.2013, p. 511-513.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Low temperature improvement method on Zn:SiOx resistive random access memory devices

AU - Chang, Kuan Chang

AU - Tsai, Tsung Ming

AU - Chang, Ting Chang

AU - Wu, Hsing Hua

AU - Chen, Kai Huang

AU - Chen, Jung Hui

AU - Young, Tai Fa

AU - Chu, Tian Jian

AU - Chen, Jian Yu

AU - Pan, Chih Hung

AU - Su, Yu Ting

AU - Syu, Yong En

AU - Tung, Cheng Wei

AU - Chang, Geng Wei

AU - Chen, Min Chen

AU - Huang, Hui Chun

AU - Tai, Ya-Hsiang

AU - Gan, Der Shin

AU - Wu, Jia Jie

AU - Hu, Ying

AU - Sze, Simon M.

PY - 2013/4/5

Y1 - 2013/4/5

N2 - To improve the resistive switching properties of the resistive random access memory (RRAM), the supercritical carbon dioxide (SCCO2) fluid is used as a low temperature treatment. In this letter, the Zn:SiOx thin films are treated by SCCO2 fluid mixed with pure water. After SCCO2 fluid treatment, the resistive switching qualities of the Zn:SiOx thin films are carried out by XPS, fourier transform infrared spectroscopy, and IV measurement. We believe that the SCCO2-treated Zn:SiOx thin film is a promising material for RRAM applications due to its compatibility with portable flat panel display.

AB - To improve the resistive switching properties of the resistive random access memory (RRAM), the supercritical carbon dioxide (SCCO2) fluid is used as a low temperature treatment. In this letter, the Zn:SiOx thin films are treated by SCCO2 fluid mixed with pure water. After SCCO2 fluid treatment, the resistive switching qualities of the Zn:SiOx thin films are carried out by XPS, fourier transform infrared spectroscopy, and IV measurement. We believe that the SCCO2-treated Zn:SiOx thin film is a promising material for RRAM applications due to its compatibility with portable flat panel display.

KW - Nonvolatile memory

KW - resistive switching

KW - silicon oxide

KW - zinc

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U2 - 10.1109/LED.2013.2248075

DO - 10.1109/LED.2013.2248075

M3 - Article

AN - SCOPUS:84875684953

VL - 34

SP - 511

EP - 513

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 4

M1 - 6479230

ER -