Low-temperature hole mobility anomaly in compensated p-channel metal-oxide-semiconductor field-effect transistor

Wei Lee Lu, Jyh-Chyurn Guo, Chin Hsin Kao, Charles Ching-Hsiang Hsu, Luke Su Lu

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

An anomalous hole mobility degradation effect at low temperature and low gate overdrive of a compensated p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) is reported. Measurements are performed with great care, including the temperature calibration of the device and measurement timing control to exclude unwanted self-heating effect. Methods to determine threshold voltage and effective mobility are discussed. The anomalous effect can be explained by the trapping or freezing out of the electrons ionized from donor level at the acceptor site. The additional charged center enhances the Coulomb scattering of conducting holes that are transported in this region.

Original languageEnglish
Pages (from-to)3413-3417
Number of pages5
JournalJapanese Journal of Applied Physics
Volume34
Issue number7R
DOIs
StatePublished - 1 Jan 1995

Keywords

  • Hole mobility
  • Low-temperature characteristics
  • MOSFET
  • Si

Fingerprint Dive into the research topics of 'Low-temperature hole mobility anomaly in compensated p-channel metal-oxide-semiconductor field-effect transistor'. Together they form a unique fingerprint.

  • Cite this