Low-temperature heteroepitaxial growth of InSb on CdTe by metalorganic chemical vapor deposition

Jyh-Cheng Chen*, P. Bush, Wei-Kuo Chen, Pao Lo Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

We report the low-temperature metalorganic chemical vapor deposition of InSb on (001)CdTe. This low-temperature process was carried out by a precracking technique. Epitaxial growth with a substrate temperature as low as 185°C can be obtained using a simple two-stage heater. The deposited films were examined by double-crystal x-ray diffraction, scanning electron microscope, and energy dispersive analysis of x ray. The films grown at 240°C are stoichiometric, single crystal, and of specular surface morphology.

Original languageEnglish
Pages (from-to)773-775
Number of pages3
JournalApplied Physics Letters
Volume53
Issue number9
DOIs
StatePublished - 1 Dec 1988

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