Low-Temperature Formation of Palladium Silicided Shallow p+ n Junctions Using Implant through Metal Technology

Cheng Tung Lin, Pei Fen Chou Chou, Huang-Chung Cheng

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Excellent silicided shallow p+n junctions have been successfully achieved by the implantation of BF2+ ions into thin Pd films on a Si substrate to a dose of 5×1015 cm-2 and subsequent low-temperature (as low as 500° C) furnace annealing. The formed junctions have been characterized for the respective implantation conditions. In this experiment the implant energy plays the key role in obtaining a low leakage diode. Reverse current density of about 1 nA/cm2 and the ideality factor of about 1.03 can be attained by the implantation of BF2+ ions at 100 keV and subsequent annealing at 600° C. The junction depth is about 0.08 µm measured by the spread resistance method. As compared with the results of unimplanted specimens the implantation of BF2+ ions into a thin Pd layer can stabilize the Pd silicide film and prevent it from forming islands during high-temperature annealing. High-temperature stability of palladium silicides and the leakage current mechanism are also discussed in this report.

Original languageEnglish
Number of pages1
JournalJapanese Journal of Applied Physics
Volume33
Issue number6R
DOIs
StatePublished - 1 Jan 1994

Keywords

  • High-temperature stability
  • Junction depth
  • Low-temperature furnace annealing
  • Shallow junction

Fingerprint Dive into the research topics of 'Low-Temperature Formation of Palladium Silicided Shallow p<sup>+</sup> n Junctions Using Implant through Metal Technology'. Together they form a unique fingerprint.

  • Cite this