Low-temperature epitaxial growth of silicon and silicon-germanium alloy by ultrahigh-vacuum chemical vapor deposition

Tz Guei Jung, Chun Yen Chang, Ting Chang Chang, Horng-Chih Lin, Tom Wang, Wen Chung Tsai, Guo Wei Huang

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Abstract

Low-temperature epitaxy of silicon and silicon-germanium alloy via an ultrahigh-vacuum chemical vapor deposition system was investigated. Bistable conditions were observed for silicon epitaxial growth performed within the temperature range of 550° C to 800° C. The activation energy of the SiGe growth rate was found to decrease as the germanium composition increased. The germanium atomic molar fraction in these epitaxial layers was tightly controlled by a computer-controlled gas source switching system. Si/SiGe superlattice structures of 20-period 5 nm Si/12 nm SiGe layers were grown to demonstrate the excellent controllability of this growth technique.

Original languageEnglish
Number of pages1
JournalJapanese Journal of Applied Physics
Volume33
Issue number1R
DOIs
StatePublished - 1 Jan 1994

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