Low temperature epitaxial growth of PZT on conductive perovskite LaNiO 3 electrode for embedded capacitor-over-interconnect (COI) FeRAM application

S. L. Lung, C. L. Liu*, S. S. Chen, S. C. Lai, C. W. Tsai, T. T. Sheng, Ta-Hui Wang, Sam Pan, T. B. Wu, Rich Liu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations

Abstract

By using a conductive perovskite LaNiO 3 (LNO) bottom electrode as seed layer, the crystallization temperature of in-situ sputter deposited PZT has been greatly reduced from 600°C to 350°C∼400°C. LNO's near-perfect lattice match with PZT allows PZT to growth epitaxially at low temperature. The 2Pr value of the low temperature grown PZT is about 20 μC/cm 2 , and this provides 130mV-400mV sense margin when bit line capacitance is 800fF. When Pt is used as the top electrode, an amorphous layer, which degrades the electric fatigue performance, is found at the interface of Pt and PZT. When the top electrode is replaced by LNO, the thickness of the amorphous layer is decreased, and fatigue is improved. COI FeRAM structure can be easily achieved by this low temperature capacitor process, and is suitable for advanced Cu/low-K embedded logic application.

Original languageEnglish
Pages (from-to)275-278
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 2001
EventIEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States
Duration: 2 Dec 20015 Dec 2001

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