Low-temperature electron dephasing time in AuPd revisited

Juhn-Jong Lin*, T. C. Lee, S. W. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Ever since the first discoveries of the quantum-interference transport in mesoscopic systems, the electron dephasing times, τφ{symbol}, in the concentrated AuPd alloys have been extensively measured. The samples were made from different sources with different compositions, prepared by different deposition methods, and various geometries (1D narrow wires, 2D thin films, and 3D thick films) were studied. Surprisingly, the low-temperature behavior of τφ{symbol} inferred by different groups over two decades reveals a systematic correlation with the level of disorder of the sample. At low temperatures, where τφ{symbol} is (nearly) independent of temperature, a scaling τφ{symbol}max ∝ D- α is found, where τφ{symbol}max is the maximum value of τφ{symbol} measured in the experiment, D is the electron diffusion constant, and the exponent α is close to or slightly larger than 1. We address this nontrivial scaling behavior and suggest that the most possible origin for this unusual dephasing is due to dynamical structure defects, while other theoretical explanations may not be totally ruled out.

Original languageEnglish
Pages (from-to)25-31
Number of pages7
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume40
Issue number1
DOIs
StatePublished - 1 Oct 2007

Keywords

  • AuPd alloys
  • Dynamical structural defects
  • Electron dephasing time
  • Weak localization

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