Low temperature doping of arsenic atoms in silicon during Pd2Si formation

I. Ohdomari*, K. Suguro, M. Akiyama, T. Maeda, King-Ning Tu, I. Kimura, K. Yoneda

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Redistribution of implanted arsenic atoms during Pd2Si formation, the so-called "snowplow effect", was studied by neutron activation analysis and Hall effect and resistivity measurements for determining the arsenic and carrier distribution profiles in silicon. Arsenic atoms in the implanted silicon region were found to be rejected from the newly formed silicide layer and to diffuse into the underlying silicon region at such low temperatures as 250°C. The carrier concentration profiles nicely overlap the arsenic profiles with a maximum activation ratio of 58%. The possibility of a low temperature doping technique using the snowplow effect is suggested.

Original languageEnglish
Pages (from-to)349-354
Number of pages6
JournalThin Solid Films
Volume89
Issue number4
DOIs
StatePublished - 26 Mar 1982

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