Low temperature deposited highly-conductive N-type SiC thin films

Kuan Lun Cheng; Huang-Chung Cheng; Wen Horng Lee; Chiapyng Lee; Tri Rung Yew

doi:10.1557/PROC-472-463

Low temperature deposited highly-conductive N-type SiC thin films

Kuan Lun Cheng^*, Huang-Chung Cheng, Wen Horng Lee, Chiapyng Lee, Tri Rung Yew

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Low-temperature deposited highly-conductive SiC films has long been a goal for many researchers involved in hetero-junction bipolar transistor, thin-film transistor, solar cell....etc. Here in this paper, we study the influences of the diluted PH₃ flow rates on SiC film quality as well as electrical properties. PH⁺ was determined from residual gas analyzer to be the main dopant source. Phosphorous atoms will play a role of enhancing the SiC grain growth and resulting in a smaller film growth rate. Carrier concentrations increase monotonically with the diluted PH₃ flow rates. While Hall mobility first increases than decreases with it due to a combination effect of the impurity scattering and a film quality improvement which dominates when the 1% PH₃/H₂ flow rate is above or below 40 sccm, respectively.

Original language	English
Pages (from-to)	463-468
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	472
DOIs	https://doi.org/10.1557/PROC-472-463
State	Published - 1 Dec 1997
Event	Proceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA Duration: 1 Apr 1997 → 4 Apr 1997

Access to Document

10.1557/PROC-472-463

Fingerprint Dive into the research topics of 'Low temperature deposited highly-conductive N-type SiC thin films'. Together they form a unique fingerprint.

Cite this

@article{5a0743175a7b498f8b4af3ec6863335e,

title = "Low temperature deposited highly-conductive N-type SiC thin films",

abstract = "Low-temperature deposited highly-conductive SiC films has long been a goal for many researchers involved in hetero-junction bipolar transistor, thin-film transistor, solar cell....etc. Here in this paper, we study the influences of the diluted PH3 flow rates on SiC film quality as well as electrical properties. PH+ was determined from residual gas analyzer to be the main dopant source. Phosphorous atoms will play a role of enhancing the SiC grain growth and resulting in a smaller film growth rate. Carrier concentrations increase monotonically with the diluted PH3 flow rates. While Hall mobility first increases than decreases with it due to a combination effect of the impurity scattering and a film quality improvement which dominates when the 1% PH3/H2 flow rate is above or below 40 sccm, respectively.",

author = "Cheng, {Kuan Lun} and Huang-Chung Cheng and Lee, {Wen Horng} and Chiapyng Lee and Yew, {Tri Rung}",

year = "1997",

month = dec,

day = "1",

doi = "10.1557/PROC-472-463",

language = "English",

volume = "472",

pages = "463--468",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "null ; Conference date: 01-04-1997 Through 04-04-1997",

}

TY - JOUR

T1 - Low temperature deposited highly-conductive N-type SiC thin films

AU - Cheng, Kuan Lun

AU - Cheng, Huang-Chung

AU - Lee, Wen Horng

AU - Lee, Chiapyng

AU - Yew, Tri Rung

PY - 1997/12/1

Y1 - 1997/12/1

N2 - Low-temperature deposited highly-conductive SiC films has long been a goal for many researchers involved in hetero-junction bipolar transistor, thin-film transistor, solar cell....etc. Here in this paper, we study the influences of the diluted PH3 flow rates on SiC film quality as well as electrical properties. PH+ was determined from residual gas analyzer to be the main dopant source. Phosphorous atoms will play a role of enhancing the SiC grain growth and resulting in a smaller film growth rate. Carrier concentrations increase monotonically with the diluted PH3 flow rates. While Hall mobility first increases than decreases with it due to a combination effect of the impurity scattering and a film quality improvement which dominates when the 1% PH3/H2 flow rate is above or below 40 sccm, respectively.

AB - Low-temperature deposited highly-conductive SiC films has long been a goal for many researchers involved in hetero-junction bipolar transistor, thin-film transistor, solar cell....etc. Here in this paper, we study the influences of the diluted PH3 flow rates on SiC film quality as well as electrical properties. PH+ was determined from residual gas analyzer to be the main dopant source. Phosphorous atoms will play a role of enhancing the SiC grain growth and resulting in a smaller film growth rate. Carrier concentrations increase monotonically with the diluted PH3 flow rates. While Hall mobility first increases than decreases with it due to a combination effect of the impurity scattering and a film quality improvement which dominates when the 1% PH3/H2 flow rate is above or below 40 sccm, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0031374606&partnerID=8YFLogxK

U2 - 10.1557/PROC-472-463

DO - 10.1557/PROC-472-463

M3 - Conference article

AN - SCOPUS:0031374606

VL - 472

SP - 463

EP - 468

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

Y2 - 1 April 1997 through 4 April 1997

ER -