Low temperature deposited highly-conductive N-type SiC thin films

Kuan Lun Cheng*, Huang-Chung Cheng, Wen Horng Lee, Chiapyng Lee, Tri Rung Yew

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

Low-temperature deposited highly-conductive SiC films has long been a goal for many researchers involved in hetero-junction bipolar transistor, thin-film transistor, solar cell....etc. Here in this paper, we study the influences of the diluted PH3 flow rates on SiC film quality as well as electrical properties. PH+ was determined from residual gas analyzer to be the main dopant source. Phosphorous atoms will play a role of enhancing the SiC grain growth and resulting in a smaller film growth rate. Carrier concentrations increase monotonically with the diluted PH3 flow rates. While Hall mobility first increases than decreases with it due to a combination effect of the impurity scattering and a film quality improvement which dominates when the 1% PH3/H2 flow rate is above or below 40 sccm, respectively.

Original languageEnglish
Pages (from-to)463-468
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume472
DOIs
StatePublished - 1 Dec 1997
EventProceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA
Duration: 1 Apr 19974 Apr 1997

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