Low-Temperature Cu-Cu Direct Bonding Using Pillar-Concave Structure in Advanced 3-D Heterogeneous Integration

Yu Tao Yang, Tzu Chieh Chou, Ting Yang Yu, Yu Wei Chang, Tai Yuan Huang, Kai Ming Yang, Cheng Ta Ko, Yu Hua Chen, Tzyy Jang Tseng, Kuan-Neng Chen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


Low-temperature Cu-Cu bonding utilizing pillar and concave on silicon substrate with and without polymer layer is successfully implemented at 200 °C under atmospheric pressure. Finite-element method (FEM) simulations on stress and deformation generated during bonding process are also presented in order to discuss their influence on bonding result of several pillar diameters and of concave sidewall angles originating from the manufacturing process. The alteration of parameters in FEM simulations would also be investigated to enhance the bonding outcome. The parameters include the diameter of pillar, the sidewall angle of concave, the shape of the concave opening, the addition of extra polymer layer under Cu concave layer, the bonding temperature, and the pitch of the pillar-concave structure. The implementation of Cu-Cu bonding using pillar-concave structure could have a prospective effect on existing packaging methods in semiconductor industry with benefits of applicability to various sorts of substrates and low bonding temperature.

Original languageEnglish
Article number7987804
Pages (from-to)1560-1566
Number of pages7
JournalIEEE Transactions on Components, Packaging and Manufacturing Technology
Issue number9
StatePublished - 1 Sep 2017


  • 3-D heterogeneous integration
  • Cu-Cu direct bonding
  • finite-element method (FEM) simulation

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