Low temperature activation of Mg-doped GaN in O2 ambient

Cheng-Huang Kuo*, Shoou Jinn Chang, Yan Kuin Su, Liang Wen Wu, Jinn Kong Sheu, Chin Hsiang Chen, Gou Chung Chi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

49 Scopus citations

Abstract

In this study, Mg-doped GaN epitaxial layers were grown by metalorganic vapor phase epitaxy (MOVPE) and annealed in O2, air and N2. It was found that we could achieve a low-resistive p-type GaN by O2-ambient annealing at a temperature as low as 400°C. The resistivity and hole concentration of the 400°C O2-ambient annealed Mg-doped GaN was 2 Ω-cm and 3 × 1017 cm-3, respectively. These values are equivalent to those values obtained from Mg-doped GaN annealed in N2 ambient at 700°C.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume41
Issue number2 A
DOIs
StatePublished - 1 Feb 2002

Keywords

  • Hall measurement
  • InGaN/GaN
  • Mg activation
  • Oxygen
  • PL

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