Abstract
In this study, Mg-doped GaN epitaxial layers were grown by metalorganic vapor phase epitaxy (MOVPE) and annealed in O2, air and N2. It was found that we could achieve a low-resistive p-type GaN by O2-ambient annealing at a temperature as low as 400°C. The resistivity and hole concentration of the 400°C O2-ambient annealed Mg-doped GaN was 2 Ω-cm and 3 × 1017 cm-3, respectively. These values are equivalent to those values obtained from Mg-doped GaN annealed in N2 ambient at 700°C.
Original language | English |
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Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 41 |
Issue number | 2 A |
DOIs | |
State | Published - 1 Feb 2002 |
Keywords
- Hall measurement
- InGaN/GaN
- Mg activation
- Oxygen
- PL