Low temperature activation of Mg-doped GaN in O2 ambient

Cheng-Huang Kuo; Shoou Jinn Chang; Yan Kuin Su; Liang Wen Wu; Jinn Kong Sheu; Chin Hsiang Chen; Gou Chung Chi

doi:10.1143/JJAP.41.L112

Low temperature activation of Mg-doped GaN in O₂ ambient

Cheng-Huang Kuo^*, Shoou Jinn Chang, Yan Kuin Su, Liang Wen Wu, Jinn Kong Sheu, Chin Hsiang Chen, Gou Chung Chi

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

In this study, Mg-doped GaN epitaxial layers were grown by metalorganic vapor phase epitaxy (MOVPE) and annealed in O₂, air and N₂. It was found that we could achieve a low-resistive p-type GaN by O₂-ambient annealing at a temperature as low as 400°C. The resistivity and hole concentration of the 400°C O₂-ambient annealed Mg-doped GaN was 2 Ω-cm and 3 × 10¹⁷ cm^-3, respectively. These values are equivalent to those values obtained from Mg-doped GaN annealed in N₂ ambient at 700°C.

Original language	English
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	41
Issue number	2 A
DOIs	https://doi.org/10.1143/JJAP.41.L112
State	Published - 1 Feb 2002

Keywords

Hall measurement
InGaN/GaN
Mg activation
Oxygen
PL

Access to Document

10.1143/JJAP.41.L112

Link to publication in Scopus

Fingerprint Dive into the research topics of 'Low temperature activation of Mg-doped GaN in O<sub>2</sub> ambient'. Together they form a unique fingerprint.

Cite this

@article{43ff5cf629bf41ea90dde7928fbf1ebf,

title = "Low temperature activation of Mg-doped GaN in O2 ambient",

abstract = "In this study, Mg-doped GaN epitaxial layers were grown by metalorganic vapor phase epitaxy (MOVPE) and annealed in O2, air and N2. It was found that we could achieve a low-resistive p-type GaN by O2-ambient annealing at a temperature as low as 400°C. The resistivity and hole concentration of the 400°C O2-ambient annealed Mg-doped GaN was 2 Ω-cm and 3 × 1017 cm-3, respectively. These values are equivalent to those values obtained from Mg-doped GaN annealed in N2 ambient at 700°C.",

keywords = "Hall measurement, InGaN/GaN, Mg activation, Oxygen, PL",

author = "Cheng-Huang Kuo and Chang, {Shoou Jinn} and Su, {Yan Kuin} and Wu, {Liang Wen} and Sheu, {Jinn Kong} and Chen, {Chin Hsiang} and Chi, {Gou Chung}",

year = "2002",

month = feb,

day = "1",

doi = "10.1143/JJAP.41.L112",

language = "English",

volume = "41",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "2 A",

}

TY - JOUR

T1 - Low temperature activation of Mg-doped GaN in O2 ambient

AU - Kuo, Cheng-Huang

AU - Chang, Shoou Jinn

AU - Su, Yan Kuin

AU - Wu, Liang Wen

AU - Sheu, Jinn Kong

AU - Chen, Chin Hsiang

AU - Chi, Gou Chung

PY - 2002/2/1

Y1 - 2002/2/1

N2 - In this study, Mg-doped GaN epitaxial layers were grown by metalorganic vapor phase epitaxy (MOVPE) and annealed in O2, air and N2. It was found that we could achieve a low-resistive p-type GaN by O2-ambient annealing at a temperature as low as 400°C. The resistivity and hole concentration of the 400°C O2-ambient annealed Mg-doped GaN was 2 Ω-cm and 3 × 1017 cm-3, respectively. These values are equivalent to those values obtained from Mg-doped GaN annealed in N2 ambient at 700°C.

AB - In this study, Mg-doped GaN epitaxial layers were grown by metalorganic vapor phase epitaxy (MOVPE) and annealed in O2, air and N2. It was found that we could achieve a low-resistive p-type GaN by O2-ambient annealing at a temperature as low as 400°C. The resistivity and hole concentration of the 400°C O2-ambient annealed Mg-doped GaN was 2 Ω-cm and 3 × 1017 cm-3, respectively. These values are equivalent to those values obtained from Mg-doped GaN annealed in N2 ambient at 700°C.

KW - Hall measurement

KW - InGaN/GaN

KW - Mg activation

KW - Oxygen

KW - PL

UR - http://www.scopus.com/inward/record.url?scp=0036478467&partnerID=8YFLogxK

U2 - 10.1143/JJAP.41.L112

DO - 10.1143/JJAP.41.L112

M3 - Article

AN - SCOPUS:0036478467

VL - 41

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 2 A

ER -