Low supply voltage CMOS charge pumps

Jieh-Tsorng Wu; Kuen Long Chang

doi:10.1109/VLSIC.1997.623817

Low supply voltage CMOS charge pumps

Jieh-Tsorng Wu^*, Kuen Long Chang

^*Corresponding author for this work

National Chiao Tung University

Research output: Contribution to conference › Paper › peer-review

7 Scopus citations

Abstract

Charge pumps that can operate under a low supply voltage are described. The use of charge transfer switches (CTSs) can improve the voltage pumping gain. Applying dynamic control to the CTSs can reduce reverse currents. Appending bootrapped output stages to the new charge pumps can further expand the maximum output voltage.

Original language	English
Pages	81-82
Number of pages	2
DOIs	https://doi.org/10.1109/VLSIC.1997.623817
State	Published - 1 Dec 1997
Event	Proceedings of the 1997 Symposium on VLSI Circuits - Kyoto, Jpn Duration: 12 Jun 1997 → 14 Jun 1997

Conference

Conference	Proceedings of the 1997 Symposium on VLSI Circuits
City	Kyoto, Jpn
Period	12/06/97 → 14/06/97

Access to Document

10.1109/VLSIC.1997.623817

Link to publication in Scopus

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abstract = "Charge pumps that can operate under a low supply voltage are described. The use of charge transfer switches (CTSs) can improve the voltage pumping gain. Applying dynamic control to the CTSs can reduce reverse currents. Appending bootrapped output stages to the new charge pumps can further expand the maximum output voltage.",

author = "Jieh-Tsorng Wu and Chang, {Kuen Long}",

year = "1997",

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doi = "10.1109/VLSIC.1997.623817",

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AB - Charge pumps that can operate under a low supply voltage are described. The use of charge transfer switches (CTSs) can improve the voltage pumping gain. Applying dynamic control to the CTSs can reduce reverse currents. Appending bootrapped output stages to the new charge pumps can further expand the maximum output voltage.

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